AM29LV640MB110REI Spansion Inc., AM29LV640MB110REI Datasheet - Page 59

• Manufacturer Part Number: AM29LV640MB110REI
• Manufacturer: Spansion Inc.

Specifications of AM29LV640MB110REI

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 23/22Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 3 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 8M/4M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Maximum values are measured at V
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
February 1, 2007 26190C8
Parameter
Sector Erase Time
Chip Erase Time
Single Word/Byte Program Time
Accelerated Single Word/Byte Program Time
(Note 3)
Total Write Buffer Program Time
Effective Write Buffer Program Time
Total Accelerated Write Buffer Program Time
(Note 4)
Effective Accelerated Write Buffer Program
Time
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
CC
all bits are programmed to 00h.
program/erase cycles.
13
Current
(Note 4)
for further information on command definitions.
CC
. Test conditions: V
Description
SS
SS
(Note 4)
(Note 3)
on all pins except I/O pins
on all I/O pins
(Note 5)
CC
= 3.0 V, worst case temperature. Maximum values are valid up to and including 100,000
Per Word
Per Word
CC
Per Byte
Per Byte
Word
Word
Byte
Byte
= 3.0 V, one pin at a time.
D A T A
Am29LV640MT/B
Typ (Note 1)
17.6
100
100
352
282
0.5
8.8
64
90
90
11
22
S H E E T
Max (Note 2)
1800
1560
128
800
800
720
720
113
15
57
49
98
–100 mA
–1.0 V
–1.0 V
CC
Min
. Programming specifications assume that
Unit
sec
sec
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
prior to erasure (Note 6)
Excludes system level
overhead (Note 7)
Excludes 00h
programming
V
Comments
+100 mA
CC
12.5 V
Max
+ 1.0 V
12
and
57