LH28F800BGN-BL12 Sharp Electronics, LH28F800BGN-BL12 Datasheet - Page 10

• Manufacturer Part Number: LH28F800BGN-BL12
• Manufacturer: Sharp Electronics

Specifications of LH28F800BGN-BL12

• Cell Type: NOR
• Density: 8Mb
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 19b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: SOP
• Program/erase Volt (typ): 2.7/3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 44
• Lead Free Status / Rohs Status: Not Compliant

command and address of the location to be written.
The CUI does not occupy an addressable memory
location. It is written when WE# and CE# are
active. The address and data needed to execute a
command are latched on the rising edge of WE# or
CE# (whichever goes high first). Standard
microprocessor write timings are used. Fig. 12 and
Fig. 13 illustrate WE# and CE# controlled write
operations.
NOTES :
1. Refer to Section 6.2.3 "DC CHARACTERISTICS".
2. X can be V
3. RY/BY# is V
Read
Output Disable
Standby
Deep Power-Down
Read Identifier Codes
Write
When V
not altered.
V
CHARACTERISTICS" for V
block erase or word write algorithms. It is V
when the WSM is not busy, in block erase suspend
mode (with word write inactive), word write suspend
mode or deep power-down mode.
PPLK
MODE
or V
PP
≤ V
IL
PPH1/2/3
or V
OL
PPLK
when the WSM is executing internal
IH
, memory contents can be read, but
for control pins and addresses, and
for V
1, 2, 3, 8 V
3, 6, 7, 8 V
PP
NOTE
PPLK
. See Section 6.2.3 "DC
3
3
4
8
and V
V
V
V
IH
IH
IH
IH
IH
PPH1/2/3
RP#
V
or V
or V
or V
or V
or V
IL
HH
HH
HH
HH
HH
Table 2 Bus Operations
OH
voltages.
during
CE#
V
V
V
V
V
X
IH
IL
IL
IL
IL
- 10 -
OE#
V
V
V
V
X
X
4 COMMAND DEFINITIONS
When the V
from the status register, identifier codes, or blocks
are enabled. Placing V
successful block erase and word write operations.
Device operations are selected by writing specific
commands into the CUI. Table 3 defines these
commands.
4. RP# at GND±0.2 V ensures the lowest deep power-
5. See Section 4.2 for read identifier code data.
6. Command writes involving block erase or word write are
7. Refer to Table 3 for valid D
8. Don’t use the timing both OE# and WE# are V
IH
IH
IL
IL
down current.
reliably executed when V
V
V
attempted.
CC1/2/3/4
HH
WE#
V
V
V
V
produce spurious results and should not be
X
X
IH
IH
IH
IL
. Block erase or word write with V
PP
See Fig. 2
ADDRESS
voltage ≤ V
X
X
X
X
X
LH28F800BG-L (FOR SOP)
PPH1/2/3
V
IN
PP
X
X
X
X
X
X
PP
PPLK
during a write operation.
= V
, read operations
(NOTE 5)
PPH1/2/3
DQ
High Z
High Z
High Z
on V
D
D
OUT
IN
0-15
PP
and V
IH
RY/BY#
IL
enables
< RP# <
.
V
V
X
X
X
X
OH
OH
CC
=