LH28F800BGN-BL12 Sharp Electronics, LH28F800BGN-BL12 Datasheet - Page 4

• Manufacturer Part Number: LH28F800BGN-BL12
• Manufacturer: Sharp Electronics

Specifications of LH28F800BGN-BL12

• Cell Type: NOR
• Density: 8Mb
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 19b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: SOP
• Program/erase Volt (typ): 2.7/3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 44
• Lead Free Status / Rohs Status: Not Compliant

PIN DESCRIPTION
DQ
SYMBOL
RY/BY#
A
RP#
WE#
GND
CE#
OE#
V
0
V
0
NC
-DQ
-A
CC
PP
18
15
OUTPUT
OUTPUT
SUPPLY
SUPPLY
SUPPLY
INPUT/
INPUT
INPUT
INPUT
INPUT
INPUT
TYPE
ADDRESS INPUTS : Inputs for addresses during read and write operations. Addresses
are internally latched during a write cycle.
DATA INPUT/OUTPUTS : Inputs data and commands during CUI write cycles; outputs
data during memory array, status register and identifier code read cycles. Data pins float
to high-impedance when the chip is deselected or outputs are disabled. Data is
internally latched during a write cycle.
CHIP ENABLE : Activates the device’s control logic, input buffers, decoders and sense
amplifiers. CE#-high deselects the device and reduces power consumption to standby
levels.
RESET/DEEP POWER-DOWN : Puts the device in deep power-down mode and resets
internal automation. RP#-high enables normal operation. When driven low, RP# inhibits
write operations which provide data protection during power transitions. Exit from deep
power-down sets the device to read array mode. With RP# = V
write can operate to all blocks. Block erase or word write with V
spurious results and should not be attempted.
OUTPUT ENABLE : Gates the device’s outputs during a read cycle.
WRITE ENABLE : Controls writes to the CUI and array blocks. Addresses and data are
latched on the rising edge of the WE# pulse.
READY/BUSY : Indicates the status of the internal WSM. When low, the WSM is
performing an internal operation (block erase or word write). RY/BY#-high indicates that
the WSM is ready for new commands, block erase is suspended, and word write is
inactive, word write is suspended, or the device is in deep power-down mode. RY/BY#
is always active and does not float when the chip is deselected or data outputs are
disabled.
BLOCK ERASE AND WORD WRITE POWER SUPPLY : For erasing array blocks or
writing words. With V
word write with an invalid V
spurious results and should not be attempted.
DEVICE POWER SUPPLY : Internal detection configures the device for 2.7 V, 3.3 V or
5 V operation. To switch from one voltage to another, ramp V
ramp V
attempts to the flash memory are inhibited. Device operations at invalid V
(see Section 6.2.3 "DC CHARACTERISTICS") produce spurious results and should
not be attempted.
GROUND : Do not float any ground pins.
NO CONNECT : Lead is not internal connected; recommend to be floated.
CC
to the new voltage. Do not float any power pins. With V
PP
≤ V
- 4 -
PP
PPLK
(see Section 6.2.3 "DC CHARACTERISTICS") produce
NAME AND FUNCTION
, memory contents cannot be altered. Block erase and
LH28F800BG-L (FOR SOP)
CC
IH
HH
down to GND and then
< RP# < V
, block erase or word
CC
≤ V
LKO
HH
CC
, all write
produce
voltage