LH28F008SCR-L85 Sharp Electronics, LH28F008SCR-L85 Datasheet - Page 5

• Manufacturer Part Number: LH28F008SCR-L85
• Manufacturer: Sharp Electronics

Specifications of LH28F008SCR-L85

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 85ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.75V
• Operating Supply Voltage (max): 5.25V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

SHARP’s LH28F008SCN-TF Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile,
read/write storage solution for a wide range of applications. Its symmetrically-blocked architecture, flexible voltage
and extended cycling provide for highly flexible component suitable for resident flash arrays, SIMMs and memory
cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For
secure code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the LH28F008SCN-TF offers three levels of protection: absolute protection with V
GND, selective hardware block locking, or flexible software block locking. These alternatives give designers
ultimate control of their code security needs.
The LH28F008SCN-TF is manufactured on SHARP’s 0.38µm ETOX
industry-standard package: the 44-lead PSOP, ideal for board constrained applications. Based on the 28F008SA
architecture, the LH28F008SCN-TF enables quick and easy upgrades for designs demanding the state-of-the-art.
*ETOX is a trademark of Intel Corporation.
SmartVoltage Technology
High-Performance Read Access Time
Operating Temperature
High-Density Symmetrically-Blocked
Architecture
Low Power Management
Enhanced Data Protection Features
2.7V(Read-Only), 3.3V or 5V V
3.3V, 5V or 12V V
85ns(5V±0.25V), 90ns(5V±0.5V),
120ns(3.3V±0.3V), 150ns(2.7V-3.6V)
0°C to +70°C
Sixteen 64K-byte Erasable Blocks
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases I
Absolute Protection with V
Flexible Block Locking
Block Erase/Byte Write Lockout
during Power Transitions
CC
in Static Mode
SmartVoltage Flash MEMORY
PP
LH28F008SCN-TF
8M-BIT (1MB x 8)
PP
=GND
CC
LHF08CTF
Automated Byte Write and Block Erase
Enhanced Automated Suspend Options
Extended Cycling Capability
SRAM-Compatible Write Interface
Industry-Standard Packaging
ETOX
CMOS Process
(P-type silicon substrate)
Not designed or rated as radiation
hardened
Command User Interface
Status Register
Byte Write Suspend to Read
Block Erase Suspend to Byte Write
Block Erase Suspend to Read
100,000 Block Erase Cycles
1.6 Million Block Erase Cycles/Chip
44-Lead PSOP
TM*
Nonvolatile Flash Technology
TM
process technology. It come in
Rev. 1.3
PP
at
2