LH28F160S3HT-L10 Sharp Electronics, LH28F160S3HT-L10 Datasheet - Page 5

• Manufacturer Part Number: LH28F160S3HT-L10
• Manufacturer: Sharp Electronics

Specifications of LH28F160S3HT-L10

• Cell Type: NOR
• Density: 16Mb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7/3.3/5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

sharp
■ Smart 3 Technology
■ Common Flash Interface (CFI)
■ Scalable Command Set (SCS)
■ High Speed Write Performance
■ High Speed Read Performance
■ Operating Temperature
■ Enhanced Automated Suspend Options
■ High-Density Symmetrically-Blocked
■ SRAM-Compatible Write Interface
■ User-Configurable x8 or x16 Operation
SHARP’s LH28F160S3HNS-L10 Flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile,
read/write storage solution for a wide range of applications. Its symmetrically-blocked architecture, flexible voltage
and extended cycling provide for highly flexible component suitable for resident flash arrays, SIMMs and memory
cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For
secure code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the LH28F160S3HNS-L10 offers three levels of protection: absolute protection with V
GND, selective hardware block locking, or flexible software block locking. These alternatives give designers
ultimate control of their code security needs.
The LH28F160S3HNS-L10 is conformed to the flash Scalable Command Set (SCS) and the Common Flash
Interface (CFI) specification which enable universal and upgradable interface, enable the highest system/device
data transfer rates and minimize device and system-level implementation costs.
The LH28F160S3HNS-L10 is manufactured on SHARP’s 0.35µm ETOX
industry-standard package: the 56-Lead SSOP ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
Architecture
2.7V or 3.3V V
2.7V, 3.3V or 5V V
Universal & Upgradable Interface
32 Bytes x 2 plane Page Buffer
2.7µs/Byte Write Transfer Rate
100ns(3.3V±0.3V), 120ns(2.7V-3.6V)
-40°C to +85°C
Write Suspend to Read
Block Erase Suspend to Write
Block Erase Suspend to Read
Thirty-two 64K-byte Erasable Blocks
CC
PP
16M-BIT (2MBx8/1MBx16)
Smart 3 Flash MEMORY
LH28F160S3HNS-L10
LHF16KAS
■ Enhanced Data Protection Features
■ Extended Cycling Capability
■ Low Power Management
■ Automated Write and Erase
■ Industry-Standard Packaging
■ ETOX
■ CMOS Process
■ Not designed or rated as radiation
Technology
(P-type silicon substrate)
hardened
Absolute Protection with V
Flexible Block Locking
Erase/Write Lockout during Power
Transitions
100,000 Block Erase Cycles
3.2 Million Block Erase Cycles/Chip
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases I
Command User Interface
Status Register
56-Lead SSOP
TM*
TM
V Nonvolatile Flash
* V process technology. It come in
CC
in Static Mode
PP
=GND
Rev. 2.0
PP
at
2