TE28F400CVT80 Intel, TE28F400CVT80 Datasheet - Page 30

• Manufacturer Part Number: TE28F400CVT80
• Manufacturer: Intel

Specifications of TE28F400CVT80

• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 80ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19/18Bit
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 3/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8/16Bit
• Number Of Words: 512K/256K
• Supply Current: 70mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

4-MBIT SmartVoltage BOOT BLOCK FAMILY
4.4
30
I
I
I
I
I
I
I
IL
LO
CCS
CCD
CCR
CCW
CCE
Sym
DC Characteristics—Commercial
Input Load Current
Output Leakage Current
V
V
Current
V
Word or Byte
V
Word or Byte
V
CC
CC
CC
CC
CC
Standby Current
Program Current for
Deep Power-Down
Read Current for
Erase Current
Parameter
Prod
Note
1,5,6
V
1,4
1,3
1,4
1
1
1
CC
SEE NEW DESIGN RECOMMENDATIONS
Typ
0.4
0.2
3.3 ± 0.3 V
60
15
15
13
10
13
10
± 1.0
Max
± 10
110
1.5
30
30
30
25
30
25
8
BV-120
BV-60
BV-80
Typ
0.8
0.2
5 V ± 10%
50
50
55
30
30
18
18
± 1.0
Max
± 10
130
2.0
60
65
50
45
35
30
8
Unit
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
CE# = RP# = BYTE# =
V
CE# = RP# = V
V
V
RP# = GND ± 0.2 V
CMOS INPUTS
V
CE# = GND, OE# = V
f = 10 MHz (5 V)
I
TTL INPUTS
V
CE# = V
f = 10 MHz (5 V)
I
V
Program in Progress
V
Program in Progress
V
Block Erase in Progress
V
Block Erase in Progress
OUT
OUT
CC
IN
CC
IN
CC
CC
CC
IN
CC
CC
PP
PP
PP
PP
WP# = V
0.2 V
5 MHz (3.3 V)
GND ± 0.2 V or V
± 0.2 V
5 MHz (3.3 V)
V
Test Conditions
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
IL
= 0 mA, Inputs =
= 0 mA, Inputs =
or V
CC
CC
CC
PPH
PPH
PPH
PPH
CC
CC
CC
CC
CC
CC
CC
IL
, OE# = V
or GND
or GND
or GND
IH
Max
Max
Max
Max
Max
Max
Max
2 (at 12 V)
1 (at 5 V)
2 (at 12 V)
1 (at 5 V)
IH
CC
±
IH
CC
CC