BFQ34 NXP Semiconductors, BFQ34 Datasheet - Page 4

• Manufacturer Part Number: BFQ34
• Manufacturer: NXP Semiconductors

Specifications of BFQ34

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 18V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 150mA
• Dc Current Gain (min): 25
• Power Dissipation: 2.7W
• Frequency (max): 4GHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. Measured with grounded emitter and base.
2. G
3. d
4. I
5. I
September 1995
I
h
f
C
C
C
C
F
G
V
P
ITO
SYMBOL
j
CBO
T
FE
o
L1
= 25 C unless otherwise specified.
c
e
re
c-s
NPN 4 GHz wideband transistor
UM
V
V
V
measured at f
measured at f = 800 MHz.
P
P
measured at f
G
C
C
im
p
q
r
p
q
UM
UM
= 120 mA; V
= 120 mA; V
= V
= V
= V
= ITO
= ITO
= 60 dB (DIN 45004B, par. 6.3.: 3-tone); I
is the maximum unilateral power gain, assuming S
=
O
O
O
10
at d
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
collector-stud capacitance
noise figure (see Fig.2)
maximum unilateral power gain
(note 2)
output voltage
output power at 1 dB gain
compression (see Fig.2)
third order intercept point (see Fig.2)
6 dB; f
6 dB; f
6 dB; f
6 dB; f
log
im
(p+q r)
(2q p)
= 60 dB; f
CE
CE
------------------------------------------------------------- - dB.
r
q
1
= 805.25 MHz;
= 803.25 MHz;
p
q
= 15 V; T
= 15 V; R
–
= 800 MHz;
= 801 MHz;
= 802 MHz and at f
= 793.25 MHz.
PARAMETER
S
11
S
2
p
21
= 795.25 MHz;
amb
L
1
2
= 75 ; T
–
= 25 C; R
S
22
2
amb
(2p q)
L
= 25 C;
= 75 ;
= 799 MHz.
C
I
I
I
I
I
f = 500 MHz
I
I
I
T
note 1
I
f = 500 MHz; T
I
f = 500 MHz; T
Figs 2 and 7 and note 3
note 4
note 5
= 120 mA; V
E
C
C
C
C
E
C
C
C
C
amb
= 0; V
= 75 mA; V
= 0; V
= 75 mA; V
= 150 mA; V
= 150 mA; V
= 0; V
= 10 mA; V
= 120 mA; V
= 120 mA; V
= 25 C
4
12
CB
CB
EB
is zero and
CONDITIONS
= 15 V
= 15 V; f = 1 MHz
= 0.5 V; f = 1 MHz
CE
CE
CE
CE
CE
CE
CE
amb
CE
amb
= 15 V; R
= 15 V; f = 500 MHz 3
= 15 V
= 15 V; f = 1 MHz;
= 15 V
= 15 V;
= 15 V;
= 15 V;
= 25 C
= 25 C
L
= 75 ; T
amb
25
25
3.5
MIN. TYP. MAX. UNIT
= 25 C;
70
70
3.5
4
2
11
1
0.8
8
16.3
1.2
26
45
Product specification
100
2.75
1.35
BFQ34
GHz
GHz
pF
pF
pF
pF
dB
dB
V
dBm
dBm
A