BFQ34 NXP Semiconductors, BFQ34 Datasheet - Page 5

• Manufacturer Part Number: BFQ34
• Manufacturer: NXP Semiconductors

Specifications of BFQ34

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 18V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 150mA
• Dc Current Gain (min): 25
• Power Dissipation: 2.7W
• Frequency (max): 4GHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 4 GHz wideband transistor
f = 40 to 860 MHz; L1 = L2 = 5 H Ferroxcube coil.
I
Fig.4
input
75
V BB
Fig.2 Intermodulation distortion MATV test circuit.
E
(pF)
C c
= 0; f = 1 MHz; T
6
4
2
0
0
Collector capacitance as a function of
collector-base voltage.
2.2 nF
0.68 pF
10 nF
j
L1
= 25 C.
24
10
10 nF
200
L2
V
CB
24
DUT
(V)
2.2 nF
MEA322
10 nF
MEA320
20
output
75
V CC
5
handbook, halfpage
handbook, halfpage
(GHz)
V
Fig.3
V
Fig.5
h
CE
CE
T f
FE
120
= 15 V; T
= 15 V; f = 500 MHz; T
80
40
4
8
6
2
0
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
j
= 25 C.
40
40
j
= 25 C.
80
80
Product specification
120
120
I
I
C
C
MBB361
(mA)
MBB357
(mA)
BFQ34
160
160