CY7C1386B-133AC Cypress Semiconductor Corp, CY7C1386B-133AC Datasheet

CY7C1386B-133AC

Manufacturer Part Number
CY7C1386B-133AC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1386B-133AC

Density
18Mb
Access Time (max)
4.2ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
133MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
19b
Package Type
TQFP
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
245mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.63V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
512K
Lead Free Status / Rohs Status
Not Compliant
Cypress Semiconductor Corporation
Document #: 38-05195 Rev. **
Features
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low-power CMOS designs using advanced
single-layer polysilicon, triple-layer metal technology. Each
memory cell consists of six transistors.
The CY7C1386B
524,288 × 36 and 1,048,576 × 18 SRAM cells with advanced
synchronous peripheral circuitry and a 2-bit counter for
internal burst operation. All synchronous inputs are gated by
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
• Fast clock speed: 200, 167, 150, 133 MHz
• Provide high-performance 3-1-1-1 access rate
• Fast OE access times: 3.0, 3.4, 3.8, and 4.2 ns
• Optimal for depth expansion
• 3.3V (–5% / +10%) power supply
• Common data inputs and data outputs
• Byte Write Enable and Global Write control
• Double-cycle deselect
• Chip enable for address pipeline
• Address, data, and control registers
• Internally self-timed Write cycle
• Burst control pins (interleaved or linear burst
• Automatic power-down available using ZZ mode or CE
• High-density, high-speed packages
• JTAG boundary scan for BGA packaging version
• Automatic power down available using ZZ mode or CE
sequence)
deselect
deselect
and
CY7C1387B
512K x 36/1M x 18 Pipelined DCD SRAM
SRAMs integrate
200 MHz
3901 North First Street
315
20
3
167 MHz
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, data
inputs, address-pipelining Chip Enables (CEs), burst control
inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb,
BWc, BWd and BWE), and Global Write (GW).
Asynchronous inputs include the Output Enable (OE) and
burst mode control (MODE). DQ
CY7C1386B and DQ
c, and d each are 8 bits wide in the case of DQ and 1 bit wide
in the case of DP.
Addresses and chip enables are registered with either
Address Status Processor (ADSP) or Address Status
Controller (ADSC) input pins. Subsequent burst addresses
can be internally generated as controlled by the Burst Advance
Pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate self-timed Write cycles. Write cycles can be one to
four bytes wide as controlled by the write control inputs.
Individual byte write allows individual byte to be written. BWa
controls DQa and DQPa. BWb controls DQ b and DQP b . BWc
controls DQc and DQPd. BWd controls DQd–DQd and DQPd.
BWa, BWb, BWc, and BWd can be active only with BWE LOW.
GW LOW causes all bytes to be written. Write pass-through
capability allows written data available at the output for the
immediately next Read cycle. This device also incorporates
pipelined enable circuit for easy depth expansion without
penalizing system performance.
The CY7C1386B and CY7C1387B are both double-cycle
deselect parts. All inputs and outputs of the CY7C1386B and
the CY7C1387B are JEDEC-standard JESD8-5-compatible.
285
3.4
20
San Jose
150 MHz
265
3.8
20
a,b
and DP
CA 95134
a,b
a,b,c,d
Revised December 3, 2001
apply to CY7C1387B. a, b,
133 MHz
245
4.2
20
and DP
CY7C1386B
CY7C1387B
408-943-2600
a,b,c,d
Unit
apply to
mA
mA
ns

Related parts for CY7C1386B-133AC

CY7C1386B-133AC Summary of contents

Page 1

... Read cycle. This device also incorporates pipelined enable circuit for easy depth expansion without penalizing system performance. The CY7C1386B and CY7C1387B are both double-cycle SRAMs integrate deselect parts. All inputs and outputs of the CY7C1386B and the CY7C1387B are JEDEC-standard JESD8-5-compatible. 200 MHz 167 MHz 3 3 ...

Page 2

... Logic Block Diagram CY7C1386B — 512K × 36 CLK ADV ADSC ADSP A [18: BWE CY7C1387B — 1M × 18 Logic Block Diagram CLK ADV ADSC ADSP A [19: BWE Document #: 38-05195 Rev. ** MODE ( [1;0] Q BURST 0 COUNTER CE Q CLR ADDRESS CE REGISTER BYTEWRITE REGISTERS BYTEWRITE REGISTERS BYTEWRITE ...

Page 3

... DDQ DDQ SSQ SSQ DQb DQa 59 22 DQb DQa 58 23 DPb DQa DQa SSQ SSQ DDQ DDQ DQa DQa 52 29 DQPa CY7C1386B CY7C1387B DDQ 76 V SSQ DPa DQa 73 DQa SSQ V 70 DDQ DQa 69 DQa (1M × 18 DQa 63 DQa DDQ V 60 SSQ DQa ...

Page 4

... V M DDQ N DQd P DQd DDQ DDQ DQb DDQ DQb J V DDQ DQb M V DDQ N DQb 64M DDQ Document #: 38-05195 Rev. ** 119-Ball BGA — Top View CY7C1386B (512K × 36 ADSP ADSC DQPc DQc V CE1 DQc DQc BWc ADV BWb DQc DQd V CLK V ...

Page 5

... DQb V DDQ G NC DQb V DDQ DQb NC V DDQ K DQb NC V DDQ L DQb NC V DDQ M DQb NC V DDQ N DPb NC V DDQ P NC 64M R MODE 32M Document #: 38-05195 Rev. ** 165-Ball Bump FBGA CY7C1386B (512K × 36) — 11 × 15 FBGA BWc BWb BWd BWa CLK ...

Page 6

... A rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQx and DPx are placed in a three-state condition.DQ a,b,c and d are 8 bits wide. DP a,b,c and d are 1 bit wide. CY7C1386B CY7C1387B ...

Page 7

... Power supply for the I/O circuitry. Should be connected to a 2.5V – 3.3V –5% +10% power supply (see page 20). Ground for the I/O circuitry. Should be connected to ground of the system. No connects. Pins are not internally connected. No connects. Reserved for address expansion. Pins are not internally connected. CY7C1386B CY7C1387B Page ...

Page 8

... Bytes not selected during a byte Write operation will remain unaltered. A synchronous 1 self-timed Write mechanism has been provided to simplify Write operations. Because the CY7C1386B/CY7C1387B is a common I/O device, the OE must be deasserted HIGH before presenting data to the DQ drivers safety precaution, DQ three-stated whenever a write cycle is detected, regardless of the state of OE ...

Page 9

... ZZ Mode Electrical Characteristics Parameter Description Fourth Address I DDZZ A [1:0] [1: ZZS ZZREC 01 10 CY7C1386B CY7C1387B after the ZZ input returns ZZREC Test Conditions Min. Max. Unit Sleep mode ZZ > V – 0.2V DD standby current Device ZZ > V – 0.2V DD operation recovery ZZ < 0.2V 2t CYC ...

Page 10

... Document #: 38-05195 Rev ADSP CY7C1386B CY7C1387B ADSC ADV Hi-Z Read Hi-Z Read Read Hi-Z Read Read Hi-Z Read Read Hi-Z Read Read Hi-Z Write Hi-Z Write Hi-Z Write Hi-Z Write Hi-Z Write Hi-Z Write Hi-Z Write Hi Page Write ...

Page 11

... OE is asynchronous and is not sampled with the clock rise masked internally during Write cycles. During a Read cycle DQ = High-Z when OE is inactive or when the device is deselected, and DQ = data when OE is active. Document #: 38-05195 Rev BWE BWd BWE Writes may occur only on subsequent clocks after x CY7C1386B CY7C1387B BWc BWb BWa BWb BWa Page ...

Page 12

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1386B/CY7C1387B incorporates a serial boundary scan Test Access Port (TAP) in the FBGA package only. The TQFP package does not offer this functionality. This port operates in accordance with IEEE Standard 1149.1-1900, but does not have the set of functions required for full 1149.1 compliance ...

Page 13

... TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. CY7C1386B CY7C1387B Page ...

Page 14

... RESET 1 TEST-LOGIC/ 0 IDLE Note: 8. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05195 Rev SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-DR 1 UPDATE- CY7C1386B CY7C1387B 1 SELECT IR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-IR 1 UPDATE- Page ...

Page 15

... TAP Controller [9, 10] Over the Operating Range Test Conditions 100 8 100 A OL GND DDQ /2, Undershoot:V (AC)<0.5V for t<t /2, Power-up TCYC CY7C1386B CY7C1387B 0 Selection Circuitry Min. Max. 2 0.2 DD 0.4 0.2 1.7 V 0.3 DD 0.5 0 <2.6V and V <2.4V and V <1.4V for t<200 ms. ...

Page 16

... CS CH 12. Test conditions are specified using the load in TAP AC test conditions. TR/ ns. Document #: 38-05195 Rev. ** [11 ,12] Over the Operating Range Description CY7C1386B CY7C1387B Min. Max. Unit 100 ns 10 MHz ...

Page 17

... TAP Timing and Test Conditions 1.25V 50 TDO GND (a) Test Clock TCK Test Mode Select TMS Test Data-In TDI Test Data-Out TDO Document #: 38-05195 Rev. ** ALL INPUT PULSES 3.3V 1.50V TCYC t TMSS t TMSH t TDIS t TDIH t t TDOX TDOV CY7C1386B CY7C1387B Page ...

Page 18

... Do Not Use. This instruction is reserved for future use. Do Not Use: This instruction is reserved for future use. Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. CY7C1386B CY7C1387B Description Reserved for version number. Defines depth of SRAM. 512K or 1M. ...

Page 19

... DQd 1L 21 ADV# DQd 2M 22 ADSP# DQd 1N 23 ADSC# DQd 2P 24 OE# DQd 1K 25 BWE# DQd 2L 26 GW# DQd 2N 27 CLK DQd MODE 3R 29 BWa BWb CE DQb CY7C1386B CY7C1387B Bump Signal Bump ID Bit # Name DQb DQb DQb DQb DQb DQb DQb DQb MODE ...

Page 20

... DDQ 6.7-ns cycle, 150 MHz 1/t MAX CYC 7.5-ns cycle, 133 MHz Max Device All Speeds DD Deselected CY7C1386B CY7C1387B Ambient [14.] Temp DDQ 0°C to +70°C 3.3V 2.5V –5% –5%/+10% 3.3V + 10% -40°C to +85°C Min. Max. 3.135 3.63 2.375 3.63 2.375 ...

Page 21

... Input waveform should have a slew rate of 1 V/ns. Document #: 38-05195 Rev. ** Test Conditions T 25° MHz 3.3 DDQ [16 317 V DDQ OUTPUT 351 INCLUDING JIG AND SCOPE (b) Test Conditions CY7C1386B CY7C1387B Max [16] ALL INPUT PULSES 3.0V 90% 90% 10% GND 1 V/ns ( (Junction to Ambient) (Junction to Case) 41.54 6.33 44.51 2 ...

Page 22

... EOLZ CHZ CLZ CY7C1386B CY7C1387B –167 –150 –133 Max. Min. Max. Min. Max. 6.7 7.5 2.3 2.5 2.3 2.5 1.5 1.5 0.5 0.5 3.4 3 ...

Page 23

... WE is the combination of BWE, BWx, and GW to define a Write cycle (see Write cycle descriptions table). 21. WDx stands for Write Data to Address X. Document #: 38-05195 Rev. ** Burst Write ADSP ignored with CE inactive CL 1 WD2 masks ADSP Undefined = Don’t Care CY7C1386B CY7C1387B Pipelined Write Unselected ADSC initiated Write WD3 Unselected with CE 2 High Page ...

Page 24

... RDx stands for Read Data from Address X. Document #: 38-05195 Rev. ** Burst Read ADSP ignored with Suspend Burst ADH masks ADSP OEHZ t DOH CLZ = Don’t Care = Undefined CY7C1386B CY7C1387B Unselected Pipelined Read inactive 1 ADSC initiated Read RD3 Unselected with CE 2 Double-Cycle Deselect Page CHZ ...

Page 25

... EOLZ Data In/Out 1a Out t CO Document #: 38-05195 Rev. ** Single Write Burst Read ADSP ignored with ADH RD3 masks ADSP 1 t EOHZ Out In = Don’t Care = Undefined CY7C1386B CY7C1387B Unselected Pipelined Read inactive Double-Cycle DH DOH Deselect Out Out Out Out t CHZ Page ...

Page 26

... CE is the combination of CE and CE . All chip selects need to be active in order to select the device Document #: 38-05195 Rev CYC CH WD1 t ADH t CEH t WES ADSP ignored with CE HIGH Out Out = Don’t Care = Undefined CY7C1386B CY7C1387B CL WD2 WD3 WD4 t WEH D( DOH t CHZ Page ...

Page 27

... Note: 25. Device must be deselected when entering ZZ mode. See Cycle Descriptions Table for all possible signal conditions to deselect the device. 26. I/Os are in three-state when exiting ZZ sleep mode. Document #: 38-05195 Rev EOV t EOHZ Three-State t EOLZ t ZZS I (active DDZZ Three-state CY7C1386B CY7C1387B t ZZREC Page ...

Page 28

... Ordering Information Speed (MHz) Ordering Code 200 CY7C1386B-200AC 167 CY7C1386B-167AC 150 CY7C1386B-150AC 133 CY7C1386B-133AC 200 CY7C1387B-200AC 167 –167AC 150 –150AC 133 –133AC 200 CY7C1386B-200BGC 167 CY7C1386B-167BGC 150 CY7C1386B-150BGC 133 CY7C1386B-133BGC 200 CY7C1387B-200BGC 167 –167BGC 150 –150BGC 133 –133BGC 200 CY7C1386B-200BZC 167 ...

Page 29

... Package Diagrams 100-Pin Thin Plastic Quad Flatpack (14 × 20 × 1.4 mm) Document #: 38-05195 Rev. ** CY7C1386B CY7C1387B 51-85050-A Page ...

Page 30

... Package Diagrams (continued) Document #: 38-05195 Rev. ** 119-Ball BGA (14 × 22 × 2.4 mm) CY7C1386B CY7C1387B Page ...

Page 31

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 165-Ball FBGA (13 × 15 × 1.2 mm) BB165A CY7C1386B CY7C1387B Page ...

Page 32

... Revision History Document Title: CY7C1386B/CY7C1387B 512K x 36/ Pipelined DCD SRAM Document Number:38-05195 ISSUE REV. ECN NO. DATE ** 112030 12/09/01 Document #: 38-05195 Rev. ** ORIG. OF CHANGE DESCRIPTION OF CHANGE DSG Change from Spec number: 38-01117 to 38-05195 CY7C1386B CY7C1387B Page ...

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