5962-9201001MXC Cypress Semiconductor Corp, 5962-9201001MXC Datasheet - Page 47

• Manufacturer Part Number: 5962-9201001MXC
• Manufacturer: Cypress Semiconductor Corp

Specifications of 5962-9201001MXC

• Lead Free Status / Rohs Status: Not Compliant

DSCC FORM 2234
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of
MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in
accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be
those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with
MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB
in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
test method 1005 of MIL-STD-883.
assured (see 3.5 herein).
APR 97
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
4.4.1 Group A inspection.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
a.
b.
c.
a.
b.
c.
a.
b.
c.
Tests shall be as specified in table II herein.
For device class M, subgroups 7 and 8 tests shall be sufficient to verify the functionality of the device. For device
classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device.
Subgroup 4 (C
changes which may affect input capacitance. A minimum sample of five devices with zero failures shall be required.
Test condition C or D. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1005 of MIL-STD-883.
T
End-point electrical parameters shall be as specified in table II herein.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All
device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at T
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.
A
5 C, after exposure, to the subgroups specified in table II herein.
DEFENSE SUPPLY CENTER COLUMBUS
= +125 C, minimum.
MICROCIRCUIT DRAWING
COLUMBUS, OHIO 43216-5000
IN
STANDARD
and C
OUT
measurements) shall be measured only for the initial test and after process or design
SIZE
A
REVISION LEVEL
B
SHEET
5962-92010
A
47
= +25 C