LRS1331C Sharp Electronics, LRS1331C Datasheet - Page 32

• Manufacturer Part Number: LRS1331C
• Manufacturer: Sharp Electronics

Specifications of LRS1331C

• Lead Free Status / Rohs Status: Not Compliant

16. Flash Memory Data Protection
Noises having a level exceeding the limit specified in the specification may be generated under specific operating
conditions on some systems. Such noises, when induced onto F-WE signal or power supply, may be interpreted as
false commands, causing undesired memory updating. To protect the data stored in the flash memory against
unwanted writing, systems operating with the flash memory should have the following write protect designs, as
appropriate.
The below describes data protection method.
Data Protection during voltage transition
1. Protecting data in specific block
2. Data Protection through F-V
3. Data protection thorough F-RP
• By setting a F-WP to low, only the boot block can be protected against overwriting. Parameter and main
• When the level of F-V
• When the F-RP is kept low during power up and power down sequence, write operation on the flash memory
• For the details of F-RP control, refer to the specification. (See Chapter 12. AC Electrical Characteristics for
blocks cannot be locked. System program, etc., can be locked by storing them in the boot block. For further
information on setting/resetting of lock bit, and controlling of F-WP and F-RP refer to the specification. (See
Chapter 5. Command Definitions for Flash Memory)
disabled. All blocks are locked and the data in the blocks are completely write protected. For the lockout
voltage, refer to specification. (See Chapter 11. DC Electrical Characteristics)
is disabled, write protecting all blocks.
Flash Memory)
CCW
CCW
is lower than V
L R S 1 3 3 1 C
CCWLK
(lockout voltage), write operation on the flash memory is
Rev. 1.00
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