AM29LV128MH123REI Spansion Inc., AM29LV128MH123REI Datasheet - Page 65

• Manufacturer Part Number: AM29LV128MH123REI
• Manufacturer: Spansion Inc.

Specifications of AM29LV128MH123REI

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 120ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 24/23Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 3/11.5 to 12.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 16M/8M
• Supply Current: 43mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

Common Flash Memory Interface (CFI)
Changed wording in last sentence of third paragraph
from, “...the autoselect mode.” to “...reading array
data.” Changed CFI website address
Revision B+3 (December 2, 2002)
Global
Added sector group protection throughout datasheet
and added Table 4.
Product Selector Guide
Added V
Ordering Information
Corrected typos in V
2.
Figure 6. Program Suspend/Program Resume
Change wait time to 15
Operating Ranges
Corrected typos in V
range.
DC Characteristics
Changed V
typos in notes.
Read-Only Characteristics
Added a 30 ns option to t
ble. Added note #3.
Hardware Reset, Erase and Program Operations,
Temporary Sector Unprotect, and Alternate CE#
Controlled Erase and Program Operations
Added Note.
Revision B+4 (February 14, 2003)
Distinctive Characteristics
Corrected performance characteristics.
Product Selector Guide
Removed 93R speed option. Added Note 2.
Ordering Information
Corrected Valid Combination to reflect speed option
changes. Added Note.
AC Characteristics
Removed 93, 93R speed option. Added Note.
Input values in the t
the Erase and Program Options table that were previ-
ously TBD. Also added notes 5 and 6.
January 31, 2007 25270C7
IO
s to table and removed Note #2
IH1
and V
WHWH
IO
IO
IH2
ranges. Removed Notes #1 and
μ
ranges. Removed full voltage
s.
1 and t
minimum to 1.9. Removed
PACC
and t
WHWH
OE
2 parameters in
standard in ta-
D A T A
Am29LV128MH/L
S H E E T
Input values in the t
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also added Note
5.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 4.
Revision C (May 16, 2003)
Global
Converted to full data sheet version. Modified Secured
Silicon Sector Flash Memory Region section to in-
clude ESN references. Changed data sheet title to
Am29LV128MH/L.
Erase and Programming Performance
Input values into table that were previously TBD. Modi-
fied notes.
Revision C+1 (June 11, 2003)
Product Selector Guide
Added Note 2 to 113 and 123 speed grades
Ordering Information
Modified speed grade options available, changed
speed grades mentioned in Note.
AC Characteristics, Erase and Program Operations
and Alternate CE# Controlled Erase and Program
Operations
Changed t
Program Operations value
Revision C+2 (September 9, 2003)
Global
Added 90 ns speed options and Ordering Part Num-
bers
Ordering Information
Added Note regarding Ordering Part Numbers.
Program Suspend/Program Resume Command
Sequence
Modified last paragraph.
Command Definitions, Table 10
Modified First Addr for Program/Erase Suspend and
Resume.
AC Characteristics
Added T
RB
, T
WHWH1
BUSY
Accelerated Effective Write Buffer
specs.
WHWH
1 and t
WHWH
2 parameters in
65