PSMN005-30K NXP Semiconductors, PSMN005-30K Datasheet - Page 7

• Manufacturer Part Number: PSMN005-30K
• Description: SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN005-30K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0055Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 20A
• Power Dissipation: 3.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PSMN005-30K_1
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
1.5
0.5
4
3
2
1
0
2
1
0
-60
junction temperature
-60
factor as a function of junction temperature
Gate-source threshold voltage as a function of
0
20
60
min
max
typ
100
120
T
j
T
(°C)
j
03af18
(°C)
03af65
Rev. 01 — 17 November 2009
180
180
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source voltage as a function of gate
N-channel TrenchMOS SiliconMAX logic level FET
R
V
(Ω)
0.016
0.012
0.008
0.004
DSon
(V)
0.02
GS
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
I
T
V
D
T
j
DD
= 25
= 20 A
j
= 25 °C
= 15 V
°
C
20
20
PSMN005-30K
40
V
GS
40
= 3.8 V
60
© NXP B.V. 2009. All rights reserved.
I
D
QG (nC)
(A)
4.5 V
10 V
03ah07
03ah11
4 V
60
80
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