PSMN005-30K NXP Semiconductors, PSMN005-30K Datasheet - Page 3

• Manufacturer Part Number: PSMN005-30K
• Description: SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN005-30K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0055Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 20A
• Power Dissipation: 3.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PSMN005-30K_1
Product data sheet
Fig 1.
Fig 3.
(%)
I
der
120
80
40
0
function of solder point temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
10
10
D
10
10
10
−1
−2
1
3
2
10
−1
100
R
DSon
= V
150
DS
/ I
T
sp
D
03aa25
(°C)
Rev. 01 — 17 November 2009
200
1
DC
Fig 2.
N-channel TrenchMOS SiliconMAX logic level FET
P
(%)
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
10
50
V
DS
t
100 μs
1 ms
10 ms
100 ms
(V)
p
= 10 μs
PSMN005-30K
100
03ah05
10
2
150
© NXP B.V. 2009. All rights reserved.
T
sp
03aa17
(°C)
200
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