PSMN006-20K NXP Semiconductors, PSMN006-20K Datasheet - Page 5

• Manufacturer Part Number: PSMN006-20K
• Description: SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN006-20K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.005Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 32A
• Power Dissipation: 8.3W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
6. Characteristics
Table 6.
PSMN006-20K_1
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
g
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
forward
transconductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
V
V
V
V
V
and
V
V
and
I
see
I
see
V
see
V
R
V
I
I
V
D
D
D
D
D
S
S
DS
DS
GS
GS
GS
GS
GS
DS
DS
G(ext)
DS
DS
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 30 A; V
= 30 A; V
= 3 A; V
= 10 A; dI
10
10
Figure 11
Figure 11
Figure 12
= 20 V; V
= 20 V; V
= 20 V; V
= 10 V; R
= 15 V; I
= 25 V; T
= 8 V; V
= -8 V; V
= 2.5 V; I
= 1.8 V; I
= 4.5 V; I
= 6 Ω; T
Rev. 01 — 17 November 2009
GS
DS
DS
S
DS
DS
DS
D
DS
/dt = -70 A/µs; V
D
D
D
= 0 V; T
j
GS
GS
GS
L
GS
= 25 °C
= 10 V; V
= 10 V; V
= 10 A
j
= V
= V
= 5 A; T
= 5 A; T
= 5 A; T
= 10 Ω; V
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz; T
= 0 V; T
GS
GS
; T
; T
j
N-channel TrenchMOS SiliconMAX ultra low level FET
= 25 °C; see
j
j
j
j
j
j
GS
GS
j
= 25 °C
= 25 °C; see
= 25 °C; see
= 25 °C; see
j
j
= 150 °C; see
= 25 °C; see
GS
= 25 °C
j
= 150 °C
= 25 °C
= 25 °C
= 25 V; T
= 2.5 V; T
= 4.5 V;
GS
= 0 V;
Figure 13
j
j
= 25 °C;
j
= 25 °C;
Figure 9
Figure 10
Figure 9
= 25 °C;
Figure 8
Figure 8
Min
20
0.15
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PSMN006-20K
Typ
-
-
0.7
-
0.05
10
10
4.8
5.7
4.2
32
10
13.2
4350
825
550
65
32
190
90
25
0.75
47
17
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
0.5
1
100
100
5.7
8.2
5
-
-
-
-
-
-
-
-
-
-
-
1.3
-
-
Unit
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
V
ns
nC
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