PSMN006-20K,518 NXP Semiconductors, PSMN006-20K,518 Datasheet
PSMN006-20K,518
Specifications of PSMN006-20K,518
PSMN006-20K /T3
PSMN006-20K /T3
Related parts for PSMN006-20K,518
PSMN006-20K,518 Summary of contents
Page 1
... Rev. 01 — 30 May 2002 1. Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN006-20K in SOT96-1 (SO8). 2. Features Very low on-state resistance Very low threshold TrenchMOS™ technology. ...
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... Conditions 150 4.5 V; Figure 2 and pulsed Figure Figure pulsed Rev. 01 — 30 May 2002 PSMN006-20K TrenchMOS™ ultra low level FET Typ Max Unit - 8 150 C 4 4.8 5.7 m 5.7 8.2 m Min Max Unit - 8 150 C 55 +150 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 09631 Product data 03aa17 120 I der (%) 150 200 der Fig 2. Normalized continuous drain current as a function of solder point temperature Rev. 01 — 30 May 2002 PSMN006-20K TrenchMOS™ ultra low level FET 03aa25 50 100 150 200 ------------------- 100 03ai63 100 (V) © ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 09631 Product data Conditions Rev. 01 — 30 May 2002 PSMN006-20K TrenchMOS™ ultra low level FET Min Typ Max Unit Figure K/W 03ai62 ...
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... Figure 150 150 4 Figure 7 and 2 Figure 7 and 1 Figure 2.5 V; Figure MHz; Figure 4 Figure / Rev. 01 — 30 May 2002 PSMN006-20K TrenchMOS™ ultra low level FET Min Typ Max Unit 0 100 4.8 5 5 4350 - pF - 825 - pF - 550 - 190 - 0.75 1 ...
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... 1 2.5 V 4 Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 30 May 2002 PSMN006-20K TrenchMOS™ ultra low level FET 03ai66 V DS > DSon 150 0.4 0.8 1 (V) > DSon 03af18 0 60 120 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF (V) Rev. 01 — 30 May 2002 PSMN006-20K TrenchMOS™ ultra low level FET 03ai70 min typ 0 0.2 0.4 0 03ai68 C iss C oss C rss 10 2 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... Product data 03ai67 ( 0 ( Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 30 May 2002 PSMN006-20K TrenchMOS™ ultra low level FET 03ai69 (nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... E 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.0100 0.20 0.16 0.244 0.050 0.041 0.0075 0.19 0.15 0.228 REFERENCES JEDEC EIAJ MS-012 Rev. 01 — 30 May 2002 PSMN006-20K TrenchMOS™ ultra low level FET detail 1.0 0.7 1.05 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20020530 - Product data (9397 750 09631) 9397 750 09631 Product data TrenchMOS™ ultra low level FET Rev. 01 — 30 May 2002 PSMN006-20K © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... TrenchMOS — trademark of Koninklijke Philips Electronics N.V. SiliconMAX — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 30 May 2002 Rev. 01 — 30 May 2002 PSMN006-20K PSMN006-20K TrenchMOS™ ultra low level FET TrenchMOS™ ultra low level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 30 May 2002 Document order number: 9397 750 09631 PSMN006-20K TrenchMOS™ ultra low level FET ...