IS62LV256-70TI ISSI, Integrated Silicon Solution Inc, IS62LV256-70TI Datasheet - Page 3

• Manufacturer Part Number: IS62LV256-70TI
• Description: SRAM 256K 32Kx8 70ns 3.3v
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: Asynchronousr

Specifications of IS62LV256-70TI

• Density: 256Kb
• Access Time (max): 70ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 15b
• Package Type: TSOP-I
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 30mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.465V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Memory Size: 256 Kbit
• Access Time: 70 ns
• Package / Case: TSOP I-28
• Supply Voltage (max): 3.465 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 30 mA
• Organization: 32 K x 8
• Interface: TTL
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Operating Supply Voltage: 3.3 V
• Lead Free Status / Rohs Status: Not Compliant

IS65LV256AL
IS62LV256AL
OPERATING RANGE
IS62LV256AL
IS65LV256AL
DC ELECTRICAL CHARACTERISTICS
V
V
V
I
I
Notes:
1. V
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. B
10/23/06
Part No.
IS62LV256AL
Symbol
V
lI
lo
oh
ol
Ih
Il
Il
= –3.0V for pulse width less than 10 ns.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Range
Commercial
Industrial
Automotive
(1)
Test Conditions
V
V
GND ≤ V
GND ≤ V
dd
dd
Ambient Temperature
= Min., I
= Min., I
–40°C to +125°C
–40°C to +85°C
0°C to +70°C
In
out
(Over Operating Range)
≤ V
oh
ol
≤ V
= 4.0 mA
dd
= –2.0 mA
dd
1-800-379-4774
, Outputs Disabled
3.3V ± 10%
3.3V ± 10%
3.3V +10%
V
DD
Com.
Com.
Auto.
Auto.
Ind.
Ind.
Min.
–0.3
–10
–10
2.4
2.2
–1
–2
–1
–2
—
V
dd
Max.
0.4
0.8
10
10
—
1
2
1
2
+ 0.3
Unit
µA
µA
V
V
V
V
3