GS8342T36AE-250 GSI TECHNOLOGY, GS8342T36AE-250 Datasheet - Page 18

• Manufacturer Part Number: GS8342T36AE-250
• Manufacturer: GSI TECHNOLOGY

Specifications of GS8342T36AE-250

• Density: 36Mb
• Access Time (max): 0.45ns
• Sync/async: Synchronous
• Architecture: DDR
• Clock Freq (max): 250MHz
• Operating Supply Voltage (typ): 1.8V
• Address Bus: 20b
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 650mA
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.9V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 165
• Word Size: 36b
• Number Of Words: 1M
• Lead Free Status / Rohs Status: Not Compliant

Capacitance
(T
AC Test Conditions
Input and Output Leakage Characteristics
Rev: 1.05 12/2007
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Note:
This parameter is sample tested.
Note:
Test conditions as specified with output loading as shown unless otherwise noted.
A
= 25
Output Leakage Current
o
Input Leakage Current
C, f = 1 MH
(except mode pins)
Output Capacitance
Clock Capacitance
Input Capacitance
Parameter
Parameter
Doff
DQ
Z
, V
Output reference level
DD
Input reference level
Max. input slew rate
Input high level
Input low level
= 3.3 V)
Parameter
Symbol
I
INDOFF
I
I
OL
IL
Symbol
VT = V
C
C
C
OUT
CLK
IN
AC Test Load Diagram
DDQ
18/37
/2
50Ω
Test Conditions
V
V
0 V ≤ V
Output Disable,
OUT
V
DD
IN
≥ V
= 0 to V
= 0 to V
Test conditions
IN
IN
GS8342T08/09/18/36AE-333/300/250/200/167
≤ V
≥ V
V
V
DD
OUT
DDQ
IN
IL
IL
—
= 0 V
RQ = 250 Ω (HSTL I/O)
V
= 0 V
REF
= 0.75 V
–100 uA
–2 uA
–2 uA
–2 uA
Min.
Conditions
Typ.
V
V
2 V/ns
V
4
6
5
DDQ
DDQ
0 V
DDQ
/2
/2
© 2006, GSI Technology
Max
Max.
2 uA
2 uA
2 uA
2 uA
5
7
6
Notes
Unit
pF
pF
pF