TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 22
![no-image](/images/manufacturer_photos/0/6/668/toshiba_sml.jpg)
TC58DVM82A1FT00
Manufacturer Part Number
TC58DVM82A1FT00
Description
Manufacturer
Toshiba
Datasheet
1.TC58DVM82A1FT00.pdf
(34 pages)
Specifications of TC58DVM82A1FT00
Cell Type
NAND
Density
256Mb
Access Time (max)
35ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
25b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP-I
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
32M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC58DVM82A1FT00
Manufacturer:
TOSHIBA
Quantity:
3 340
Company:
Part Number:
TC58DVM82A1FT00
Manufacturer:
TOSHIBA
Quantity:
3 340
Reset
Internal erase
Internal V
generated voltage is discharged to 0 volts and the device enters Wait state.
The Reset mode stops all operations. For example, in the case of a Program or Erase operation the internally
The response to an “FFH” Reset command input during the various device operations is as follows:
voltage
RY
RY
RY
RY
RY
RY
When a Reset (FFH) command is input during programming
When a Reset (FFH) command is input during erasing
When a Reset (FFH) command is input during Read operation
When a Status Read command (70H) is input after a Reset
When two or more Reset commands are input in succession
/
/
/
/
/
/
BY
BY
BY
BY
BY
BY
PP
80
00
FF
FF
The second
D0
10
70
FF
command is invalid, but the third
(1)
FF
70
t
FF
FF
FF
RST
(max 6 µ s)
t
RST
(max 10 µ s)
t
RST
(max 500 µ s)
FF
(2)
FF
I/O status: Pass/Fail → Pass
I/O status: Ready/Busy → Busy
TC58DVM82A1FT00
command is valid.
Ready/Busy → Ready
2003-03-25 22/34
00
Figure 10.
Figure 12.
Figure 11.
00
00
Figure 8.
Figure 9.
(3)
FF