TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 30

• Manufacturer Part Number: TC58DVM82A1FT00
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT00

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 35ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

(12)
(1
RY
3)
/
WE
RE
BY
I/O
Several programming cycles on the same page (Partial Page Program)
Note regarding the
There
column address counter is incremented by the RE clock independently of the address input timing, If the
inte
RE clock input pulses start before the address input, and the pointer reaches the last column address, an
2nd programming
A page can be divided into up to 3 segments. Each segment can be programmed individually as follows:
3rd programming
Hence the RE clock input must start after the address input.
1st programming
RE The internal
rnal read operation (array to register) will occur and the device will enter Busy state. (Refer to Figure 25.)
fore, once the device has been set to Read mode by a “00H”, “01H” or “50H”
2.5
Result
Note: The input data for unprogrammed or previously programmed page segments must be “1”
colu
RE
Data Pattern 1
Data Pattern 1
mn addr
signal
All 1s
ess counter is incremented synchronously with the
Data Pattern 2
Data Pattern 2
All 1s
Figure 25.
Figure 24.
All 1s
Address input
All 1s
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Data Pattern 3
Data Pattern 3
RE
co
mmand, the internal
clock in Read
mode.