MRF19085 Freescale Semiconductor, MRF19085 Datasheet

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MRF19085

Manufacturer Part Number
MRF19085
Description
Manufacturer
Freescale Semiconductor
Datasheets

Specifications of MRF19085

Lead Free Status / Rohs Status
Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
MRF19085
Manufacturer:
FREESCALE
Quantity:
490
Part Number:
MRF19085
Manufacturer:
BB
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Part Number:
MRF19085LR3
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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for V
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for PCN and PCS base station applications with frequencies from
I
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power
40
DQ
Derate above 25°C
Select Documentation/Application Notes - AN1955.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — - 51 dB
IM3 — - 36.5 dBc
μ″ Nominal.
= 850 mA, P
out
= 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
C
= 25°C
Test Conditions
Characteristic
Rating
DD
= 26 Volts,
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465 - 06, STYLE 1
CASE 465A - 06, STYLE 1
Document Number: MRF19085
1930- 1990 MHz, 90 W, 26 V
MRF19085LSR3
MRF19085LR3
MRF19085LR3
LATERAL N - CHANNEL
MRF19085LR3 MRF19085LSR3
RF POWER MOSFETs
MRF19085LSR3
NI - 780
M3 (Minimum)
NI - 780S
1 (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Value
Class
1.56
0.79
273
150
200
(1)
Rev. 8, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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