MRF19085 Freescale Semiconductor, MRF19085 Datasheet - Page 6

• Manufacturer Part Number: MRF19085
• Manufacturer: Freescale Semiconductor

Specifications of MRF19085

• Lead Free Status / Rohs Status: Compliant

−20
−30
−40
−50
−60
−70
6
MRF19085LR3 MRF19085LSR3
24
22
20
18
16
14
12
−100
Figure 7. 2-Carrier N-CDMA Broadband Performance
−10
−20
−30
−40
−50
−60
−70
−80
−90
1930
0
4
−7.5
V
P
I
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
DQ
DD
out
100 kHz Tone Spacing
V
I
f1 = 1960 MHz
DQ
DD
= 850 mA
−6
Figure 3. 2-Carrier N-CDMA Spectrum
= 18 W Avg.
= 26 V
Figure 5. Intermodulation Distortion
= 850 mA
1940
= 26 Vdc
Integrated BW
1.2288 MHz
Products versus Output Power
−4.5
−IM3 in
P
out
−ACPR in 30 kHz
10
Integrated BW
, OUTPUT POWER (WATTS) PEP
−3
1950
3rd Order
5th Order
7th Order
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
−1.5
Channel BW
1.2288 MHz
1960
0
+ACPR in 30 kHz
Integrated BW
1.5
1970
Integrated BW
3
1.2288 MHz
+IM3 in
4.5
η
1980
TYPICAL CHARACTERISTICS
ACPR
G ps
η
IM3
IRL
6
1990
100
7.5
0
−10
−20
−30
−40
−50
−60
50
40
30
20
10
0
30
25
20
15
10
Figure 4. 2-Carrier N - CDMA ACPR, IM3, Power Gain and
5
0
14
12
10
0.5
8
6
4
2
0
−20
−25
−30
−35
−40
−45
−50
−55
2
V
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
4
DD
V
I
f = 1960 MHz
DQ
DD
= 26 Vdc, I
V
f = 1960 MHz
100 kHz Tone Spacing
Drain Efficiency versus Output Power
= 850 mA
DD
= 26 V
Distortion versus Output Power and I
1
Figure 6. Third Order Intermodulation
P
= 26 Vdc
out
, OUTPUT POWER (WATTS Avg.) N−CDMA
DQ
Figure 8. CW Performance
P
I
DQ
out
= 850 mA
P
10
, OUTPUT POWER (WATTS) PEP
out
= 550 mA
IM3
η
ACPR
G ps
1150 mA
1000 mA
700 mA
850 mA
, OUTPUT POWER (WATTS)
10
G ps
P in
η
Freescale Semiconductor
10
RF Device Data
DQ
100
30
140
−28
−35
−42
−49
−56
−63
−70
100
54
47
40
33
26
19
12
5