MRF9180 Freescale Semiconductor, MRF9180 Datasheet - Page 3

• Manufacturer Part Number: MRF9180
• Manufacturer: Freescale Semiconductor

Specifications of MRF9180

• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 40W
• Power Gain (typ)@vds: 17.5dB
• Frequency (min): 865MHz
• Frequency (max): 895MHz
• Package Type: NI-1230
• Pin Count: 5
• Forward Transconductance (typ): 6S
• Output Capacitance (typ)@vds: 77@26VpF
• Reverse Capacitance (typ): 3.8@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Screw
• Mode Of Operation: CDMA
• Number Of Elements: 1
• Power Dissipation (max): 388000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Functional Tests
1. Measurement made with device in push-pull configuration.
Power Output, 1 dB Compression Point
Common-Source Amplifier Power Gain
Drain Efficiency
(V
f1 = 880.0 MHz)
(V
f1 = 880.0 MHz)
(V
f1 = 880.0 MHz)
DD
DD
DD
= 26 Vdc, CW, I
= 26 Vdc, P
= 26 Vdc, P
(1)
(In Freescale Test Fixture, 50 ohm system) (continued)
out
out
= 170 W CW, I
= 170 W CW, I
DQ
= 1400 mA,
Characteristic
DQ
DQ
(T
= 1400 mA,
= 1400 mA,
C
= 25°C unless otherwise noted)
(continued)
Symbol
P
G
1dB
η
ps
Min
—
—
—
16.5
Typ
170
55
Max
—
—
—
MRF9180R6
Unit
dB
W
%
3