MRF9180 Freescale Semiconductor, MRF9180 Datasheet - Page 6

• Manufacturer Part Number: MRF9180
• Manufacturer: Freescale Semiconductor

Specifications of MRF9180

• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 40W
• Power Gain (typ)@vds: 17.5dB
• Frequency (min): 865MHz
• Frequency (max): 895MHz
• Package Type: NI-1230
• Pin Count: 5
• Forward Transconductance (typ): 6S
• Output Capacitance (typ)@vds: 77@26VpF
• Reverse Capacitance (typ): 3.8@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Screw
• Mode Of Operation: CDMA
• Number Of Elements: 1
• Power Dissipation (max): 388000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

MRF9180R6
6
-10
-20
-30
-40
-50
-60
-70
19
18
17
16
15
14
Î Î Î
Î Î Î
Î Î Î
Î Î Î
Î Î Î
Î Î Î
Î Î Î
Î Î Î
Î Î Î
Figure 6. Intermodulation Distortion Products
Figure 4. Power Gain versus Output Power
1700 mA
1100 mA
2000 mA
1400 mA
800 mA
3rd Order
V
I
f1 = 880 MHz
f2 = 880.1 MHz
DQ
DD
1
1
= 1400 mA
= 26 Vdc
5th Order
P
P
out
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
, OUTPUT POWER (WATTS) PEP
10
10
18
17
16
15
14
13
12
10
11
Figure 3. Class AB Broadband Circuit Performance
860
7th Order
865
TYPICAL CHARACTERISTICS
IMD
G
h
IRL
V
f1 = 880 MHz
f2 - 880.1 MHz
100
DD
100
ps
870
= 26 Vdc
875
f, FREQUENCY (MHz)
880
18
16
14
12
10
8
0.1
-10
-20
-30
-40
-50
-60
885
Two-Tone Measurement
100 kHz Tone Spacing
V
P
I
DQ
DD
out
= 1400 mA
Figure 5. Intermodulation Distortion versus
Figure 7. Power Gain and Efficiency versus
= 26 Vdc
= 170 W (PEP)
890
V
f1 = 880 MHz
f2 = 880.1 MHz
DD
1
= 26 Vdc
P
1
895
out
P
880 mA
, OUTPUT POWER (WATTS) AVG.
out
, OUTPUT POWER (WATTS) PEP
1400 mA
900
G
h
Output Power
Output Power
ps
50
45
40
35
-3 0
-3 2
-3 4
-3 6
-3 8
10
10
1100 mA
2000 mA
V
I
f1 = 880 MHz
DQ
Freescale Semiconductor
DD
-1 0
-1 2
-1 4
-1 6
-1 8
= 1400 mA
= 26 Vdc
100
RF Device Data
1700 mA
100
1000
60
50
40
30
20
10
0