SST39SF512-70-4C-NH Microchip Technology, SST39SF512-70-4C-NH Datasheet - Page 12

• Manufacturer Part Number: SST39SF512-70-4C-NH
• Description: Flash 64K X 8 70ns
• Manufacturer: Microchip Technology

Specifications of SST39SF512-70-4C-NH

• Data Bus Width: 8 bit
• Memory Type: NAND
• Memory Size: 512 Kbit
• Architecture: Sectored
• Interface Type: Parallel
• Access Time: 70 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 50 mA
• Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Package / Case: PLCC-32
• Organization: 64 KB x 8
• Lead Free Status / Rohs Status: No

Data Sheet
©2003 Silicon Storage Technology, Inc.
ADDRESS A MS-0
FIGURE 8: T
FIGURE 9: WE# C
ADDRESS A MS-0
DQ 7-0
WE#
OE#
CE#
WE#
DQ 6
OE#
CE#
OGGLE
Note: Toggle bit output is always high first.
Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are
ONTROLLED
B
IT
A MS = Most significant address
A MS = A 15 for SST39SF512
interchageable as long as minimum timings are met. (See Table 10)
SA X = Sector Address
A MS = Most significant address
A MS = A 15 for SST39SF512
5555
T
IMING
T WP
SW0
AA
S
D
2AAA
T OEH
ECTOR
IAGRAM
SW1
55
SIX-BYTE CODE FOR SECTOR-ERASE
-E
RASE
5555
Note
SW2
T CE
80
T OE
T
IMING
5555
12
D
SW3
AA
IAGRAM
2AAA
55
SW4
512 Kbit Multi-Purpose Flash
SA X
WITH SAME OUTPUTS
TWO READ CYCLES
SW5
30
T SE
SST39SF512
S71149-05-000
1149 F07.2
1149 F08.3
T OES
11/03