SST39SF512-70-4C-NH Microchip Technology, SST39SF512-70-4C-NH Datasheet - Page 13

Flash 64K X 8 70ns

SST39SF512-70-4C-NH

Manufacturer Part Number
SST39SF512-70-4C-NH
Description
Flash 64K X 8 70ns
Manufacturer
Microchip Technology
Datasheet

Specifications of SST39SF512-70-4C-NH

Data Bus Width
8 bit
Memory Type
NAND
Memory Size
512 Kbit
Architecture
Sectored
Interface Type
Parallel
Access Time
70 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
50 mA
Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Package / Case
PLCC-32
Organization
64 KB x 8
Lead Free Status / Rohs Status
No

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512 Kbit Multi-Purpose Flash
SST39SF512
©2003 Silicon Storage Technology, Inc.
ADDRESS A MS-0
FIGURE 10: WE# C
FIGURE 11: S
ADDRESS A 14-0
DQ 7-0
DQ 7-0
WE#
WE#
OE#
CE#
OE#
CE#
OFTWARE
Device ID = B4H for SST39SF512
Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are
ONTROLLED
5555
interchageable as long as minimum timings are met. (See Table 10)
SA X = Sector Address
A MS = Most significant address
A MS = A 15 for SST39SF512
5555
ID E
T WP
T WP
SW0
SW0
AA
AA
NTRY AND
Three-byte sequence for
2AAA
Software ID Entry
2AAA
C
HIP
SW1
SW1
55
-E
55
T WPH
SIX-BYTE CODE FOR CHIP-ERASE
R
RASE
5555
EAD
5555
SW2
T
SW2
80
90
IMING
5555
D
13
IAGRAM
SW3
T IDA
AA
2AAA
0000
SW4
55
T AA
BF
5555
0001
Device ID
SW5
10
T SCE
S71149-05-000
1149 F17.2
1149 F09.3
Data Sheet
11/03

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