STP16NE06 STMicroelectronics, STP16NE06 Datasheet

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STP16NE06

Manufacturer Part Number
STP16NE06
Description
MOSFET Power TO-220 N-CH 60V 16A
Manufacturer
STMicroelectronics
Datasheet

Specifications of STP16NE06

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220
Fall Time
18 ns
Minimum Operating Temperature
- 65 C
Rise Time
35 ns
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP16NE06
Manufacturer:
ST
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Manufacturer:
ST
0
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
June 1998
STP16NE06
STP16NE06FP
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175
HIGH dV/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
I
dV/dt
V
New RDS (on) spec. starting from JULY 98
DM
V
V
V
T
P
DGR
I
I
T
ISO
GS
stg
DS
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
N - CHANNEL 60V - 0.08
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
V
60 V
60 V
= 0.08
DSS
< 0.100
< 0.100
R
DS(on)
c
Parameter
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
16 A
11 A
= 25
= 100
I
D
o
C
o
STripFET
C
(
1
) I
SD
- 16A - TO-220/TO-220FP
INTERNAL SCHEMATIC DIAGRAM
16 A, di/dt
TO-220
STP16NE06
0.4
200 A/ s, V
16
10
64
60
POWER MOSFET
1
STP16NE06FP
2
-65 to 175
3
Value
175
60
60
STP16NE06
DD
6
20
STP16NE06FP
V
(BR)DSS
PRELIMINARY DATA
2000
TO-220FP
0.2
11
64
30
7
, T
j
T
JMAX
1
W/
Unit
V/ns
o
o
2
W
V
V
V
A
A
A
V
C
C
o
3
C
1/9

Related parts for STP16NE06

STP16NE06 Summary of contents

Page 1

... Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 ’ June 1998 - 16A - TO-220/TO-220FP STripFET I DS(on INTERNAL SCHEMATIC DIAGRAM Parameter = 100 di/ STP16NE06 STP16NE06FP POWER MOSFET PRELIMINARY DATA TO-220 TO-220FP Value STP16NE06 STP16NE06FP 0.4 0.2 2000 6 -65 to 175 175 200 (BR)DSS j JMAX Unit V/ns o ...

Page 2

... STP16NE06/FP THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbol ...

Page 3

... Pulse width limited by safe operating area Safe Operating Area for TO-220 Test Conditions =4 Test Conditions =4 Test Conditions di/dt = 100 150 Safe Operating Area for TO-220FP STP16NE06/FP Min. Typ. Max. Unit Min. Typ. Max. Unit Min. Typ. Max. Unit 1 0. 3/9 ...

Page 4

... STP16NE06/FP Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STP16NE06/FP 5/9 ...

Page 6

... STP16NE06/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STP16NE06/FP inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 P011C ...

Page 8

... STP16NE06/FP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 8/9 TO-220FP MECHANICAL DATA mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 16 30.6 10.6 16.4 9.3 3 inch MIN. TYP. MAX. 0.173 ...

Page 9

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES . STP16NE06/FP 9/9 ...

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