STP16NE06 STMicroelectronics, STP16NE06 Datasheet - Page 3

• Manufacturer Part Number: STP16NE06
• Description: MOSFET Power TO-220 N-CH 60V 16A
• Manufacturer: STMicroelectronics

Specifications of STP16NE06

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 18 ns
• Minimum Operating Temperature: - 65 C
• Rise Time: 35 ns
• Lead Free Status / Rohs Status: Details

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Symbol
Symbol
Symbol
V
I
t
SDM
t
I
r(Voff)
SD
Q
Q
d(on)
I
Q
RRM
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
rr
g
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
V
V
R
I
I
V
SD
SD
DD
DD
DD
DD
G
G
=4.7 W
=4.7
= 16 A
= 16 A
= 30 V
= 48 V
= 40 V
= 30 V
Test Conditions
Test Conditions
Test Conditions
V
V
I
GS
I
D
GS
D
T
I
V
di/dt = 100 A/ s
D
j
= 16 A
= 16 A
= 10 V
GS
= 150
= 8 A
= 0
Safe Operating Area for TO-220FP
= 10 V
o
C
V
GS
= 10 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
0.21
10
35
20
18
30
70
5
7
7
6
STP16NE06/FP
Max.
Max.
Max.
1.5
80
40
30
10
25
45
16
64
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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