STP16NE06 STMicroelectronics, STP16NE06 Datasheet - Page 9

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STP16NE06

Manufacturer Part Number
STP16NE06
Description
MOSFET Power TO-220 N-CH 60V 16A
Manufacturer
STMicroelectronics
Datasheet

Specifications of STP16NE06

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220
Fall Time
18 ns
Minimum Operating Temperature
- 65 C
Rise Time
35 ns
Lead Free Status / Rohs Status
 Details

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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