H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 43

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
7.2 Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications
AC Overshoot/Undershoot Specification for Clock, Data, Strobe and Mask
Maximum peak amplitude allowed for
overshoot area (see Figure)
Maximum peak amplitude allowed for
undershoot area (see Figure)
Maximum overshoot area above VDDQ (See Figure)
Maximum undershoot area below VSSQ (See Figure)
V o lts
(V )
V D D Q
V S S Q
Description
C lo c k , D a ta S tro b e a n d M a sk O v e rsh o o t a n d U n d e rsh o o t D e fin itio n
M a x im u m A m p litu d e
M a x im u m A m p litu d e
0.13 V-ns
0.13 V-ns
800MHz
0.4V
0.4V
T im e (n s)
Specification
0.11 V-ns
0.11 V-ns
900MHz
0.4V
0.4V
U n d e rsh o o t A re a
O v e rsh o o t A re a
H5TQ2G63BFR
0.10 V-ns
0.10 V-ns
1.0GHz
0.4V
0.4V
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