H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 53

58T1898

H5TQ2G63BFR-H9C

Manufacturer Part Number
H5TQ2G63BFR-H9C
Description
58T1898
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H5TQ2G63BFR-H9C

Memory Type
SDRAM
Memory Configuration
128M X 16
Access Time
13.5ns
Interface Type
CMOS
Memory Case Style
FBGA
No. Of Pins
96
Operating Temperature Range
0°C To +85°C
Memory Size
2 Gbit
Rohs Compliant
Yes

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Rev. 0.5 / Aug. 2010
CK
CK
DQ, DM
DQS,
TDQS,
DQS
Begin point: Rising edge of CK - CK
defined by the end point of ODTLcnw
TDQS
End point:
Extrapolated
point at VRTT_Nom
VRTT_Nom
t
ADC
T
SW21
T
SW11
Definition of tADC
V
SW1
Begin point: Rising edge of CK - CK defined by
the end point of ODTLcwn4 or ODTLcwn8
V
SW2
VRTT_Wr
t
End point: Extrapolated point at VRTT_Wr
ADC
T
SW12
T
SW22
VRTT_Nom
H5TQ2G63BFR
TD_TADC_DEF
VTT
VSSQ
53

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