H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 85

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
Figure 5 - Illustration of tangent line for setup time t
(for ADD/CMD with respect to clock).
Note: Clock and Strobe are drawn
on a different time scale.
V
V
V
V
V
V
IL(dc)
IL(ac)
IH(ac)
IH(dc)
DDQ
REF(dc)
DQS
DQS
CK
CK
max
max
min
min
V
nominal
SS
line
V
region
REF
to ac
Δ
TF
tDS
Setup Slew Rate
tVAC
Setup Slew Rate
tIS
tangent
Falling Signal
Rising Signal
line
tDH
tIH
DS
(for DQ with respect to strobe) and t
nominal
=
line
=
tangent line [V
tangent line [V
Δ
TR
tIS
tVAC
tDS
tangent
line
IH(ac)
ΔTR
REF(dc)
ΔTF
tIH
tDH
V
REF
min - V
region
H5TQ2G63BFR
- V
to ac
IS
IL(ac)
REF(dc)
max]
]
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