TE28F800C3TA90 Intel, TE28F800C3TA90 Datasheet - Page 24

• Manufacturer Part Number: TE28F800C3TA90
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 90ns 48-Pin TSOP
• Manufacturer: Intel

Specifications of TE28F800C3TA90

• Package: 48TSOP
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Intel
24
Table 7.
£
Advanced+ Boot Block Flash Memory (C3)
Command Bus Operations
Bus operations are defined in
Read Array
Read Identifier
CFI Query
Read Status Register
Clear Status Register
Program
Block Erase/Confirm
Program/Erase Suspend
Program/Erase Resume
Lock Block
Unlock Block
Lock-Down Block
Protection Program
X = "Don’t Care"
SRD = Status Reg.
Data
NOTES:
1. Following the Read Identifier or CFI Query commands, read operations output device identification data or
2. Either 0x40 or 0x10 command is valid, but the Intel standard is 0x40.
3. When writing commands, the upper data bus [DQ8-DQ15] should be either V
CFI query information, respectively. See
draw.
Command
PA = Prog Addr
PD = Prog Data
Notes
1,3
1,3
1,3
1,3
1,3
2,3
1,3
1,3
1,3
1,3
1,3
1,3
1,3
Table 5, “Bus Operations” on page
Oper
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Section 4.1.2
BA = Block Addr
First Bus Cycle
Addr
X
X
X
X
X
X
X
X
X
X
X
X
X
and
Section
0x40/
0xFF
0xB0
0xD0
0xC0
Data
0x90
0x98
0x70
0x50
0x10
0x20
0x60
0x60
0x60
IA
ID = Identifier Data
4.1.3.
Identifier Addr.
17.
Oper
Read
Read
Read
Write
Write
Write
Write
Write
Write
IL
or V
Second Bus Cycle
IH
, to minimize current
QA = Query Addr.
QD = Query Data
Addr
QA
PA
BA
BA
BA
BA
PA
IA
X
Datasheet
0xD0
Data
0x01
0x2F
SRD
D0H
QD
PD
PD
ID