CY7C037V-25AC Cypress Semiconductor Corp, CY7C037V-25AC Datasheet - Page 7

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CY7C037V-25AC

Manufacturer Part Number
CY7C037V-25AC
Description
SRAM Chip Async Dual 3.3V 576K-Bit 32K x 18 25ns 100-Pin TQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C037V-25AC

Package
100TQFP
Timing Type
Asynchronous
Density
576 Kb
Typical Operating Supply Voltage
3.3 V
Address Bus Width
15 Bit
Number Of I/o Lines
18 Bit
Number Of Ports
2
Number Of Words
32K

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C037V-25AC
Manufacturer:
CY
Quantity:
38
Document #: 38-06078 Rev. *A
AC Test Loads and Waveforms
Switching Characteristics
OUTPUT
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Notes:
12. To access RAM, CE=L, UB=L, SEM=H. To access semaphore, CE=H and SEM=L. Either condition must be valid for the entire t
13. At any given temperature and voltage condition for any given device, t
14. Test conditions used are Load 2.
15. This parameter is guaranteed by design, but it is not production tested. For information on port-to-port delay through RAM cells from writing port to reading
11. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
ABE
WC
SCE
AW
HA
SA
PWE
SD
Read Cycle
Write Cycle
C = 30 pF
Parameter
(a) Normal Load (Load 1)
[12]
[15]
[15]
[12]
[12]
[12]
I
port, refer to Read Timing with Busy waveform.
OI
[13, 14, 15]
[13, 14, 15]
[13, 14, 15]
[13, 14, 15]
/I
OH
and 30-pF load capacitance.
Read Cycle Time
Address to Data Valid
Output Hold From Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable Access Time
Write Cycle Time
CE LOW to Write End
Address Valid to Write End
Address Hold From Write End
Address Set-Up to Write Start
Write Pulse Width
Data Set-Up to Write End
3.3V
R1 = 590Ω
R2 = 435Ω
Description
Over the Operating Range
GND
3.0V
OUTPUT
3 ns
(b) Thévenin Equivalent (Load 1)
10%
C = 30 pF
ALL INPUT PULSES
90%
[11]
HZCE
R
TH
Min.
is less than t
15
15
12
12
12
10
= 250Ω
3
3
3
0
0
0
-15
LZCE
Max.
15
15
10
10
10
15
15
90%
V
and t
TH
10%
= 1.4V
HZOE
CY7C037V/038V
3 ns
Min.
20
20
16
16
17
12
is less than t
3
3
3
0
0
0
OUTPUT
-20
(c) Three-State Delay (Load 2)
C = 5 pF
Max.
LZOE
20
20
12
12
12
20
20
(Used for t
including scope and jig)
.
SCE
CY7C027V/028V
CY7C037V/038V
time.
Min.
25
25
20
20
22
15
3
3
3
0
0
0
LZ
, t
-25
HZ
Max.
, t
3.3V
25
25
13
15
15
25
25
HZWE
Page 7 of 18
R1 = 590Ω
R2 = 435Ω
, & t
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
LZWE

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