ADG784BCP-REEL Analog Devices Inc, ADG784BCP-REEL Datasheet - Page 2

• Manufacturer Part Number: ADG784BCP-REEL
• Description: IC MUX/DEMUX QUAD 2X1 20LFCSP
• Manufacturer: Analog Devices Inc

Specifications of ADG784BCP-REEL

• Rohs Status: RoHS non-compliant
• Function: Multiplexer/Demultiplexer
• Circuit: 4 x 2:1
• On-state Resistance: 5 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.8 V ~ 5.5 V
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-VFQFN, CSP Exposed Pad

ADG784–SPECIFICATIONS
SINGLE SUPPLY
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature ranges are as follows: B Version, –40°C to +85°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On Resistance Match Between
On Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
t
Break-Before-Make Time Delay, t
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
Distortion
Charge Injection
C
C
C
I
I
I
ON
OFF
DD
IN
O
S
D
D
Channels (∆R
I
INL
(OFF)
, C
(OFF)
S
or I
(ON)
INH
ON
ON
)
)
D
INL
(V
INH
S
D
(OFF)
DD
(OFF)
, I
FLAT(ON)
= 5 V
S
(ON)
2
D
)
10%, GND = 0 V. All specifications T
25 C
2.2
0.15
0.5
± 0.01
± 0.5
± 0.01
± 0.5
± 0.01
± 0.5
0.001
0.001
B Version
T
T
0 V to V
5
0.5
1
± 1
± 1
± 1
2.4
0.8
± 0.5
10
20
4
8
5
1
–65
–75
240
0.5
10
10
20
30
1
1
100
MIN
MAX
to
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
MHz typ
% typ
pC typ
pF typ
pF typ
pF typ
µA max
µA typ
µA typ
mA max
MIN
to T
MAX
unless otherwise noted.)
Test Conditions/Comments
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
V
R
V
R
V
R
V
R
R
R
R
C
f = 1 kHz
f = 1 kHz
f = 1 MHz
V
Digital Inputs = 0 V or V
V
V
D
D
D
D
D
D
IN
S
S
S1
DD
IN
S
L
L
L
L
L
L
L
L
/V
= 3 V; Test Circuit 4
= 3 V; Test Circuit 4
= 100 Ω, C
= 100 Ω, C
= 100 Ω, C
= 100 Ω, f = 10 MHz; Test Circuit 7
= 100 Ω, f = 10 MHz; Test Circuit 8
= 100 Ω; Test Circuit 6
= 100 Ω
= 1 nF; Test Circuit 9
= 0 V to V
= 0 V to V
= 0 V to V
= 4.5 V, V
= 4.5 V, V
= V
= V
= V
= 5 V
= 5.5 V
D
= 0 V
S
INL
S2
= 4.5 V; V
= 5 V; Test Circuit 5
or V
DD
DD
DD
S
S
L
L
L
= 1 V; V
= 1 V; V
INH
= 35 pF,
= 35 pF,
= 35 pF,
, I
, I
; I
S
S
S
D
= –10 mA
= –10 mA
= –10 mA
= V
D
D
S
DD
= 1 V, V
= 1 V, V
= 1 V; Test Circuit 3
S
S
= 4.5 V;
= 4.5 V;