NAND512R3A2SZA6E Micron Technology Inc, NAND512R3A2SZA6E Datasheet - Page 18

• Manufacturer Part Number: NAND512R3A2SZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2SZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Command set
5
18/51
Command set
All bus write operations to the device are interpreted by the command interface. The
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is High. Device operations are selected by writing
specific commands to the command register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The commands are summarized in
Table 10.
1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or
2. Any undefined command sequence is ignored by the device.
3. The Read B command (code 01h) is not used in x16 devices.
4. The Program Confirm command (code 10h) is no more necessary for 512 Mbit, 70 nm devices. It is
Read A
Read B
Read C
Read Electronic Signature
Read Status Register
Page Program
Copy Back Program
Block Erase
Reset
input/output data are not shown.
optional and has been maintained for backward compatibility.
(3)
Command
Commands
210403 - Rev 3
1
Table
st
FFh
00h
01h
50h
90h
70h
80h
00h
60h
cycle
Bus write operations
10.
2
nd
D0h
8Ah
10h
cycle
–
–
–
–
–
–
(1)(2)
3
(10h)
rd
cycle
–
–
–
–
–
–
–
–
Numonyx SLC SP 70 nm
(4)
accepted during
Command
busy
Yes
Yes