NAND512R3A2SZA6E Micron Technology Inc, NAND512R3A2SZA6E Datasheet - Page 34

• Manufacturer Part Number: NAND512R3A2SZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2SZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

DC and AC parameters
Figure 17. Equivalent testing circuit for AC characteristics measurement
Table 19.
1. Standby and leakage currents refer to a single die device. For a multiple die device, their value must be multiplied for the
34/51
I
Symbol
OL
V
number of dice of the stacked device, while the active power consumption depends on the number of dice concurrently
executing different operations.
I
I
I
I
I
V
V
V
I
V
DD1
DD2
DD3
DD4
DD5
I
LKO
LO
OH
OL
(RB)
LI
IH
IL
DC characteristics, 1.8 V devices
Operating current
M
V
DD
Output high voltage level
Standby current (CMOS)
Output low voltage level
Output low current (RB)
Output leakage current
Standby current (TTL)
Input leakage current
supply voltage (erase and
Input high voltage
Input low voltage
program lockout)
Parameter
NAND flash
Sequential
Program
Erase
read
C L
GND
210403 - Rev 3
E=V
(1)
E=V
E = V
V
V
OUT
Test conditions
DD
IN
t
DD
I
RLRL
OH
I
V
= 0 to V
OL
-0.2, WP=0V/V
= 0 to V
IL,
-0.2, WP=0/V
OL
= −100 µA
= 100 µA
I
minimum
OUT
= 0.1 V
–
–
–
–
–
DD
V DD
GND
= 0 mA
DD
max
max
2R ref
2R ref
DD
DD
V
V
Ai11085
DD
DD
−0.3
Min
–
–
–
–
–
–
–
–
3
–
-0.4
-0.1
Numonyx SLC SP 70 nm
Typ
10
8
8
8
–
–
–
–
–
–
–
4
–
V
DD
Max
±10
±10
0.4
0.1
1.1
15
15
15
50
1
–
+0.3
Unit
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V