EM6K31T2R Rohm Semiconductor, EM6K31T2R Datasheet
EM6K31T2R
Specifications of EM6K31T2R
Related parts for EM6K31T2R
EM6K31T2R Summary of contents
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Drive Nch + Nch MOSFET EM6K31 Structure Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Low voltage drive(2.5V drive). Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) EM6K31 ...
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EM6K31 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) ...
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EM6K31 Electrical characteristic curves 0.5 Ta= 25C Pulsed 0 10V 4. 4. 2. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE ...
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EM6K31 1 V =0V GS Pulsed 0.1 Ta=125C 0.01 Ta=75C Ta=25C Ta=-25C 0.001 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 100 Ta=25C f=1MHz V =0V GS Ciss 10 Crss Coss ...
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EM6K31 Measurement circuits D.U. Fig.1-1 Switching time measurement circuit Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ○ 2010 ROHM Co., Ltd. ...
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