EM6K31T2R Rohm Semiconductor, EM6K31T2R Datasheet - Page 3

• Manufacturer Part Number: EM6K31T2R
• Description: TRANS MOSFET N-CH 60V 0.25A EMT6
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of EM6K31T2R

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: -
• Input Capacitance (ciss) @ Vds: 15pF @ 25V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical characteristic curves
○
EM6K31
c
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100
100
0.1
0.5
0.4
0.3
0.2
0.1
0.1
10
Fig.4 Static Drain-Source On-State
10
1
0
0.001
1
0.001
0
Fig.7 Static Drain-Source On-State
Fig.1 Typical Output Characteristics( I )
Ta= 25C
Pulsed
DRAIN-SOURCE VOLTAGE : V
Ta= 25C
Pulsed
V
Pulsed
DRAIN-CURRENT : I
V
V
Resistance vs. Drain Current( I )
GS
V
GS
GS
GS
= 4.0V
DRAIN-CURRENT : I
= 4.5V
= 4.0V
0.2
= 10V
Resistance vs. Drain Current( IV )
0.01
0.01
0.4
0.6
V
V
V
V
D
GS
GS
GS
GS
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
0.1
[A]
0.1
V
D
= 2.5V
= 4.0V
= 4.5V
= 10V
V
GS
[A]
GS
= 2.5V
= 2.8V
0.8
DS
[V]
1
1
1
100
0.5
0.4
0.3
0.2
0.1
100
0.1
0.1
10
10
0
1
0.001
1
0.001
Fig.2 Typical Output Characteristics( II )
0
DRAIN-SOURCE VOLTAGE : V
Fig.5 Static Drain-Source On-State
Fig.8 Static Drain-Source On-State
V
Pulsed
V
Pulsed
GS
GS
= 2.5V
= 10V
DRAIN-CURRENT : I
V
V
V
Resistance vs. Drain Current( II )
2
Resistance vs. Drain Current( IV )
DRAIN-CURRENT : I
GS
GS
GS
= 10V
= 4.5V
= 4.0V
0.01
0.01
4
3/5
6
V
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
0.1
GS
0.1
V
GS
= 2.5V
D
Ta= 25C
Pulsed
D
[A]
= 2.8V
[A]
8
DS
[V]
10
1
1
0.0001
0.001
0.01
100
0.01
0.1
0.1
10
0.1
1
0.001
1
0.001
1
0
Fig.3 Typical Transfer Characteristics
V
Pulsed
GATE-SOURCE VOLTAGE :
V
Pulsed
V
Pulsed
Fig.6 Static Drain-Source On-State
Fig.9 Forward Transfer Admittance
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
DS
GS
DS
= 10V
= 4.5V
= 10V
0.5
DRAIN-CURRENT : I
DRAIN-CURRENT : I
Resistance vs. Drain Current( III )
vs. Drain Current
0.01
0.01
1
1.5
Ta= -25C
Ta=25C
Ta=75C
Ta=125C
0.1
0.1
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
2
D
2010.09 - Rev.B
[A]
D
[A]
V
2.5
GS
[V]
Data Sheet
3
1
1