QS8K2TR Rohm Semiconductor, QS8K2TR Datasheet
QS8K2TR
Specifications of QS8K2TR
Related parts for QS8K2TR
QS8K2TR Summary of contents
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Drive Nch MOSFET QS8K2 Structure Silicon N-channel MOSFET Features 1) Low On-resistance. 2) High power package. 3) 2.5V drive. Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) QS8K2 Absolute maximum ratings (Ta ...
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QS8K2 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage V Static drain-source on-state R resistance Forward transfer ...
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QS8K2 Electrical characteristic curves 3.5 Ta=25°C Pulsed 10V 4. 2. 1.5V ...
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QS8K2 150 Ta=25°C Pulsed I = 3.5A D 100 I = 1.75A GATE-SOURCE VOLTAGE : V [V] GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 C iss 100 C rss C oss ...
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QS8K2 Measurement circuits D.U. Fig.1-1 Switching time measurement circuit D.U.T. I G(Const Fig.2-1 Gate charge measurement circuit www.rohm.com ©2010 ...
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