QS8K2TR Rohm Semiconductor, QS8K2TR Datasheet - Page 4

• Manufacturer Part Number: QS8K2TR
• Description: MOSFET 2N-CH 30V 3.5A TSMT8
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of QS8K2TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 54 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 4.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 285pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: TSMT8
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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QS8K2
150
100
1000
50
100
0
10
GATE-SOURCE VOLTAGE : V
Fig.10 Static Drain-Source On-State
0
0.01
DRAIN-SOURCE VOLTAGE : V
Ta=25°C
f=1MHz
V
Resistance vs. Gate Source Voltage
GS
Fig.13 Typical Capacitance
=0V
C
0.1
rss
vs. Drain-Source Voltage
I
D
I
= 1.75A
D
C
5
= 3.5A
oss
1
GS
Ta=25°C
Pulsed
[V]
10
C
iss
DS
[V]
10
100
1000
100
10
1
0.01
Fig.11 Switching Characteristics
DRAIN-CURRENT : I
t
d(off)
0.1
t
4/5
r
t
f
1
Ta=25°C
V
V
R
Pulsed
DD
GS
G
D
[A]
=10Ω
=15V
=4.5V
t
d(on)
10
5
4
3
2
1
0
0
Fig.12 Dynamic Input Characteristics
TOTAL GATE CHARGE : Qg [nC]
1
2
3
2010.09 - Rev.A
4
Ta=25°C
V
I
R
Pulsed
D
DD
= 3.5A
G
=10Ω
5
=15V
Data Sheet
6