BCP5416E6327XT Infineon Technologies, BCP5416E6327XT Datasheet - Page 3

• Manufacturer Part Number: BCP5416E6327XT
• Manufacturer: Infineon Technologies

Specifications of BCP5416E6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 45V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 25
• Power Dissipation: 2W
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
I
Collector-base breakdown voltage
I
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
DC current gain
I
I
I
I
I
Collector-emitter saturation voltage
I
Base-emitter voltage
I
AC Characteristics
Transition frequency
I
1
C
C
C
C
C
C
E
C
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 100 µA, I
= 100 µA, I
= 100 µA, I
= 5 mA, V
= 150 mA, V
= 150 mA, V
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, V
= 50 mA, V
= 30 V, I
= 30 V, I
C
CE
B
B
B
E
E
E
E
E
CE
= 0
B
= 0 , BCP54...
= 0 , BCP55...
= 0 , BCP56-10, -16
= 0
= 0 , T
CE
CE
CE
CE
CE
= 0 , BCP54...
= 0 , BCP55...
= 0 , BCP56-10, -16
1)
= 2 V
= 50 mA
= 10 V, f = 100 MHz
= 2 V, BCP54/BCP55
= 2 V, BCP56-10
= 2 V, BCP54-16...BCP56-16
= 2 V
= 2 V
1)
A
= 150 °C
A
= 25°C, unless otherwise specified
1)
3
f
Symbol
V
V
V
I
h
V
V
T
CBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
min.
100
100
45
60
25
40
63
25
45
60
80
5
-
-
-
-
-
Values
BCP54...-BCP56...
100
160
typ.
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
250
160
250
0.1
0.5
20
2008-10-10
1
-
-
-
-
-
-
-
-
-
-
MHz
Unit
V
µA
-
V