BCP5416E6327XT Infineon Technologies, BCP5416E6327XT Datasheet - Page 4

• Manufacturer Part Number: BCP5416E6327XT
• Manufacturer: Infineon Technologies

Specifications of BCP5416E6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 45V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 25
• Power Dissipation: 2W
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

h
DC current gain h
V
Base-emitter saturation voltage
I
Ι
C
FE
C
CE
= ƒ (V
10
10
10
10
= 2 V
5
5
5
mA
10
10
10
10
10
3
2
1
0
10
4
2
1
0
BCP 54...56
0
100
0
BEsat
25 C
BCP 54...56
-50 C
C
), h
0.2
10
FE
1
FE
0.4
= 10
100
= ƒ (I
-50 C
25 C
10
0.6
2
C
C
)
0.8
10
3
V
EHP00268
Ι
mA
V
EHP00270
BEsat
C
10
1.2
4
4
Ι
Collector-emitter saturation voltage
I
Collector cutoff current I
V
Ι
C
CBO
C
CBO
= ƒ (V
10
mA
10
10
10
10
10
nA
10
10
10
10
10
= 30 V
4
3
2
1
0
4
3
2
1
0
-1
CEsat
0
BCP 54...56
0
BCP 54...56
), h
0.2
FE
100
-50
25 C
50
= 10
BCP54...-BCP56...
C
C
0.4
max
CBO
100
= ƒ (T
2008-10-10
0.6
typ
V
T
A
CEsat
EHP00269
EHP00271
A
C
V
)
150
0.8