PEF 82912 F V1.4 Infineon Technologies, PEF 82912 F V1.4 Datasheet - Page 62

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PEF 82912 F V1.4

Manufacturer Part Number
PEF 82912 F V1.4
Description
IC MODULAR ISDN NT INTELL TQFP64
Manufacturer
Infineon Technologies
Series
Q-SMINT®r
Datasheets

Specifications of PEF 82912 F V1.4

Function
Second Generation Modular
Interface
ISDN
Mounting Type
Surface Mount
Package / Case
64-LFTQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Supply
-
Voltage - Supply
-
Power (watts)
-
Operating Temperature
-
Number Of Circuits
-
Other names
PEF82912FV1.4XT
PEF82912FV14XP
SP000007558
SP000007559
Table 15
Transformer Parameters
Transformer ratio;
Device side : Line side
Main inductance of windings on the line side
Leakage inductance of windings on the line side L
Coupling capacitance between the windings on
the device side and the windings on the line side
DC resistance of the windings on device side
DC resistance of the windings on line side
Transmitter
The transmitter requires external resistors R
voltage to the pulse mask (nominal 750 mV according to ITU I.430, to be tested with the
test mode “TM1”) on the one hand and in order to meet the output impedance of
minimum 20
on the other hand.
Note: The resistance of the S-transformer must be taken into account when
Figure 27
Data Sheet
SX1
dimensioning the external resistors R
components (e.g. a choke), then the resistance of these additional components
must be taken into account, too.
SX2
S-Transformer Parameters
External Circuitry S-Interface Transmitter
on the other hand (to be tested with the testmode ’Continuous Pulses’)
20...40
47
47
V
DD
54
stx
. If the transmit path contains additional
stx
Symbol Value
n
L
C
R
R
GND
= 47
H
S
K
B
L
in order to adjust the output
2 : 1
typ. 30
typ. <3
typ. <100
typ. 2.4
typ. 1.4
Operational Description
PEF 80912/80913
extcirc_S.vsd
DC Point
2 : 1
Unit
mH
µH
pF
2001-03-29

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