BF5020WE6327XT Infineon Technologies, BF5020WE6327XT Datasheet - Page 2

• Manufacturer Part Number: BF5020WE6327XT
• Manufacturer: Infineon Technologies

Specifications of BF5020WE6327XT

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Continuous Drain Current: 0.025A
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 32@5VdB
• Noise Figure (max): 1.2(Typ)dB
• Package Type: SOT-143
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.034S
• Input Capacitance (typ)@vds: 2.4@5V@Gate 1pF
• Output Capacitance (typ)@vds: 1@5VpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Lead Free Status / Rohs Status: Compliant

Thermal Resistance
Parameter
Channel - soldering point
BF5020, BF5020R
BF5020W
Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+I
Gate2-source breakdown voltage
+I
Gate1-source leakage current
V
Gate2-source leakage current
V
Drain current
V
Drain-source current
V
Gate1-source pinch-off voltage
V
Gate2-source pinch-off voltage
V
1
D
For calculation of R
G1S
G2S
DS
DS
DS
DS
G1S
G2S
= 20 µA, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, I
= 6 V, V
= 6 V, V
= 10 mA, V
= 10 mA, V
D
G1S
G2S
G2S
G1S
G2S
G1S
= 20 µA, V
thJA
= 0 , V
= 4 V, R
= 4 V, I
= 0 , V
G2S
G1S
= 0 , V
= 0 , V
please refer to Application Note Thermal Resistance
= 0 , V
= 0 , V
G2S
G2S
D
G1S
DS
DS
1)
G1
= 20 µA
= 0
= 0
= 4 V
DS
DS
= 120 kΩ
= 0
= 2 V
A
= 0
= 0
= 25°C, unless otherwise specified
2
Symbol
V
+V
+V
+I
+I
I
I
V
V
Symbol
R
DSS
DSX
(BR)DS
G1S(p)
G2S(p)
thchs
G1SS
G2SS
(BR)G1SS
(BR)G2SS
min.
12
6
6
-
-
-
-
-
-
Values
Value
≤ 370
≤ 280
typ.
0.7
0.7
14
-
-
-
-
-
-
max.
100
15
15
50
50
BF5020...
2009-10-01
-
-
-
-
Unit
V
nA
mA
V
Unit
K/W