BF5020WE6327XT Infineon Technologies, BF5020WE6327XT Datasheet - Page 6

BF5020WE6327XT

Manufacturer Part Number
BF5020WE6327XT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BF5020WE6327XT

Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.025A
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
32@5VdB
Noise Figure (max)
1.2(Typ)dB
Package Type
SOT-143
Pin Count
3 +Tab
Forward Transconductance (typ)
0.034S
Input Capacitance (typ)@vds
2.4@5V@Gate 1pF
Output Capacitance (typ)@vds
1@5VpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Lead Free Status / Rohs Status
Compliant
Drain current I
V
AGC characteristic AGC = ƒ(V
f = 800 MHz
measured in test circuit, see page 7
DS
mA
dB
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
= 5 V, R
28
24
22
20
18
16
14
12
10
8
6
4
2
0
0
0.5
0
Rg1=120KOHm
0.5
1
G1
D
1
1.5
= Parameter in kΩ
= ƒ(V
1.5
2
G2S
2
Rg1=82KOHm
120K
2.5
)
82K
2.5
3
G2S
3
V
)
V
V
V
G2S
G2S
4
4
6
AGC characteristic AGC = ƒ(V
f = 50 MHz
measured in test circuit, see page 7
Crossmodulation V
V
measured in test circuit, see page 7
DS
dBµV
dB
107
104
103
102
101
100
-20
-30
-40
-50
-60
-70
-80
= 5 V
99
98
97
96
95
94
93
92
0
0.5
0
Rg=120KOHm
5
1
10
RG1=82KOHm_22m
1.5
15
20
unw
2
Rg=82KOHm
25
RG1=120KOHm_15m
= (AGC)
2.5
30
35
3
BF5020...
2009-10-01
G2S
40 dB
V
)
V
AGC
G2S
50
4

Related parts for BF5020WE6327XT