2SC3355 NEC, 2SC3355 Datasheet
2SC3355
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2SC3355 Summary of contents
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... HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low Noise and High Gain ...
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... I -Collector Current- FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2 heat sink 19 1 0.5 150 0 -Collector to Base Voltage-V CB INSERTION GAIN vs. COLLECTOR CURRENT 0 INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY 0.1 2SC3355 f = 1.0 MHz 1.0 GHz -Collector Current-mA G max 21e 0.2 0.4 0.6 0 f-Frequency-GHz ...
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... 100 dB V/ 100 MHz 200 190 MHz -Collector Current-mA ...
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... GHz 180 4 150 120 11e 2.0 GHz REACTANCE COMPONENT ( R ) –––– 0.2 GHz 2.0 GHz 90 S -FREQUENCY 12e 120 60 30 150 0 180 150 60 120 2SC3355 = 0.2 GHz 22e CONDITION 12e 2.0 GHz 0.2 GHz 0 0.1 0.2 0.3 0.4 0 ...
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... [MEMO] 2SC3355 5 ...
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... [MEMO] 6 2SC3355 ...
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... [MEMO] 2SC3355 7 ...
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... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SC3355 M4 96. 5 ...