CY7C1356V25-200AC Cypress Semiconductor Corporation., CY7C1356V25-200AC Datasheet
CY7C1356V25-200AC
Related parts for CY7C1356V25-200AC
CY7C1356V25-200AC Summary of contents
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... Write operations are controlled by the Byte Write Selects (BWS a CY7C1356V25) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE asynchronous Output Enable (OE) provide for easy bank se- lection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence ...
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... V V DDQ 20 61 DDQ DQa DQb 22 59 DQa DQb 23 58 DQa DPb 24 57 DQa DDQ 27 54 DDQ NC DQa 28 53 DQa DPa CY7C1354V25 CY7C1356V25 CY7C1356V25 66 65 (512K x 18 DDQ DPa DQa DQa DDQ DQa DQa DQa DQa V DDQ V SS DQa DQa DDQ ...
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... SS DQ BWS NC BWS CEN MODE TMS TDI TCK TDO CY7C1356(512K x 18 BGA 16M ADV/ BWS DD(1) DD DD( CLK BWS CEN MODE 32M A TMS TDI TCK TDO 3 CY7C1354V25 CY7C1356V25 DDQ DDQ DDQ DDQ 32M NC DNU V DDQ DDQ DDQ DDQ DDQ DNU V DDQ ...
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... LOW, the pins can behave as outputs. When HIGH, DQ The outputs are automatically three-stated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. 4 CY7C1354V25 CY7C1356V25 controls DQ and DP , BWS and DP ...
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... Chip Enable 1 Input, active LOW. Sampled on the 1 Synchronous rising edge of CLK. Used in conjunction with Input- Chip Enable 2 Input, active HIGH. Sampled on the 2 Synchronous rising edge of CLK. Used in conjunction with CY7C1354V25 CY7C1356V25 . During write sequences, [31: controlled by BWS and DP is controlled for normal operation. DD controls DQ and DP a ...
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... Input- This is a reserved pin. Tie Asynchronous ation. V Input- These pins have to be tied to a voltage level > Vih. dd(1) Asynchronous They need not be tied to Vdd. 6 CY7C1354V25 CY7C1356V25 to select/deselect the device. [17:0] – During write se- [31:0] is controlled by BWS , DP is con controlled by BWS ...
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... TMS Test Mode Se- This pin controls the Test Access Port state machine. lect Sampled on the rising edge of TCK. Synchronous TCK JTAG-Clock Clock input to the JTAG circuitry. 16M connects. Reserved for address expansion. 32M, 64M connects. DNU - Do not use pins. 7 CY7C1354V25 CY7C1356V25 ...
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... Single Write Access section above. When ADV/LD is driven HIGH on the subsequent clock rise, the chip enables (CE ignored and the burst counter is incremented. The correct BWS (BWS CY7C1356V25) inputs must be driven in each cycle of the burst write in order to write the correct bytes of data. 8 CY7C1354V25 CY7C1356V25 –A ...
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... Fourth First Address Address A[1:0] A[1: CY7C1354V25 CY7C1356V25 CLK Comments L-H I/Os three-state following next recognized clock. L-H Clock ignored, all operations suspended. L-H Address latched. L-H Address latched, data presented two valid clocks later. L-H Burst Read operation. Previous ac- cess was a Read operation ...
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... Write Bytes 2, 1 Write Bytes Write Byte 3 - (DQd and DPd) Write Bytes 3, 0 Write Bytes 3, 1 Write Bytes Write Bytes 3, 2 Write Bytes Write Bytes Write All Bytes Function (CY7C1356V25) Read Write - No Bytes Written Write Byte 0 - (DQ and Write Byte 1 - (DQ and DP ...
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... The TAP controller used in this SRAM is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. The TAP controller can- not be used to load address, data, or control signals into the SRAM and cannot preload the Input or Output buffers. The 11 CY7C1354V25 CY7C1356V25 ...
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... BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. 12 CY7C1354V25 CY7C1356V25 and t ). The SRAM clock input might not ...
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... TAP Controller State Diagram TEST-LOGIC 1 RESET 1 TEST-LOGIC/ 0 IDLE Note: The 0/1 next to each state represents the value at TMS at the rising edge of TCK. PRELIMINARY 1 SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-DR 1 UPDATE- CY7C1354V25 CY7C1356V25 1 SELECT IR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-IR 1 UPDATE- ...
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... Over the Operating Range Test Conditions 100 2 100 A OL GND DDQ /2, Undershoot: V (AC)<0.5V for t<t /2, Power-up TCYC 14 CY7C1354V25 CY7C1356V25 0 Selection Circuitry Min. Max. 1.7 2.1 0.7 0.2 1.7 V 0.3 DD 0.3 0 <2.6V and V <2.4V and V <1.4V for t<200 ms DDQ ...
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... CS CH 10. Test conditions are specified using the load in TAP AC test conditions. t PRELIMINARY [9, 10] Over the Operating Range Description / ns CY7C1354V25 CY7C1356V25 Min. Max Unit 100 ns 10 MHz ...
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... TAP Timing and Test Conditions 1.25V 50 TDO GND (a) Test Clock TCK Test Mode Select TMS Test Data-In TDI Test Data-Out TDO PRELIMINARY TMSS t TMSH t TDIS t TDIH t TDOX 16 CY7C1354V25 CY7C1356V25 ALL INPUT PULSES 2.5V 1.25V t TCYC t TDOV ...
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... Do Not Use: This instruction is reserved for future use. Do Not Use: This instruction is reserved for future use. Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. 17 CY7C1354V25 CY7C1356V25 Description Description ...
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... TBD TBD TBD 98 TBD TBD TBD 99 TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD 18 CY7C1354V25 CY7C1356V25 Bump Signal Bump ID Bit # Name ID TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD ...
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... V > DDQ 6-ns cycle, 166 MHz 1/t MAX CYC 7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz Max Device Deselected, All speed grades CY7C1354V25 CY7C1356V25 Ambient [11] Temperature DDQ +70 C 2.5V 5% Min. Max. Unit 2.375 2.625 V 2.375 2.625 V 2.0 V 0 0.3V ...
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... Tested initially and after any design or process change that may affect these parameters. PRELIMINARY Test Conditions MHz 2.5V DD DDQ R=1667 2.5V OUTPUT 2. GND R=1538 INCLUDING JIG AND SCOPE (b) Test Conditions Symbol CY7C1354V25 CY7C1356V25 Max. Unit [14] ALL INPUT PULSES 90% 90% 10% 10% < 2.0 ns < 2.0 ns (c) TQFP Typ. Units Notes TBD C/W JA TBD C ...
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... SRAMs when sharing the same EOLZ CHZ CLZ 21 CY7C1354V25 CY7C1356V25 -133 -100 Max. Min. Max. Min. Max. 7.5 10.0 166 133 100 2.0 4.0 2 ...
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... PRELIMINARY CYC RA4 WA5 RA6 CHZ t DOH Out Out ( for CY7C1354V25 & for CY7C1356V25) define a write cycle DON’T CARE = UNDEFINED 22 CY7C1354V25 CY7C1356V25 t t CENH CENS CEN HIGH blocks all synchronous inputs RA7 Out , and CE . All chip enables need to be active ...
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... PRELIMINARY t CYC WA2 CHZ Q1+2 Q1+3 D2 Q1+1 Out Out In Out define a write cycle (see Write Cycle Description table and CE . All chip enables need to be active in order to select UNDEFINED = DON’T CARE 23 CY7C1354V25 CY7C1356V25 RA3 t CLZ D2+2 D2+3 D2+1 Out input signals. x ...
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... Switching Waveforms (continued) OE Timing Ordering Information Speed (MHz) Ordering Code 200 CY7C1354V25-200AC/ CY7C1356V25-200AC CY7C1354V25-200BGC/ CY7C1356V25-200BGC 166 CY7C1354V25-166AC/ CY7C1356V25-166AC CY7C1354V25-166BGC/ CY7C1356V25-166BGC 133 CY7C1354V25-133AC/ CY7C1356V25-133AC CY7C1354V25-133BGC/ CY7C1356V25-133BGC 100 CY7C1354V25-100AC/ CY7C1356V25-100AC CY7C1354V25-100BGC/ CY7C1356V25-100BGC Shaded areas contain advance information. Document #: 38-00762-A PRELIMINARY OE t EOHZ Three-State ...
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... Package Diagram 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 PRELIMINARY 25 CY7C1354V25 CY7C1356V25 51-85050-A ...
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... Package Diagram Revision History Document Title: CY7C1354V25/CY7C1356V25 Document Number: 38-00762 REV. ECN NO. ISSUE DATE ** 2562 4/29/99 *A 2681 9/10/99 © Cypress Semiconductor Corporation, 1999. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...