UPA1717G-E1 NEC, UPA1717G-E1 Datasheet
UPA1717G-E1
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UPA1717G-E1 Summary of contents
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... Duty Cycle 2. Mounted on ceramic substrate of 1200 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...
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... Reverse Recovery Charge TEST CIRCUIT 1 SWITCHING TIME D.U. Wave Form Wave Form = 1 s Duty Cycle °C, All terminals are connected.) A SYMBOL TEST CONDITIONS DS(on 4 DS(on GS(off) DS ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...
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FORWARD TRANSFER CHARACTERISTICS 100 150˚C A 75˚C 25˚C 1 25˚C 0.1 0.01 0.001 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 Pulsed 100 150 T - Channel Temperature - ˚C ch CAPACITANCE vs. ...
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Data Sheet G14047EJ1V0DS00 PA1717 ...
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Data Sheet G14047EJ1V0DS00 PA1717 7 ...
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... NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others ...