UPA1720G-E1 NEC, UPA1720G-E1 Datasheet

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UPA1720G-E1

Manufacturer Part Number
UPA1720G-E1
Description
N-channel enhancement type power MOS FET
Manufacturer
NEC
Datasheet

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Part Number:
UPA1720G-E1
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Part Number:
UPA1720G-E1
Manufacturer:
NEC
Quantity:
20 000
Document No.
Date Published
Printed in Japan
application of notebook computers.
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation (T
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Notes 1. PW
The
Low On-Resistance
R
R
R
Low C
Built-in G-S Protection Diode
Small and Surface Mount Package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
3. Starting T
PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management
iss
G13888EJ2V0DS00 (2nd edition)
March 2000 NS CP(K)
PA1720G
= 25.0 m MAX. (V
= 33.0 m MAX. (V
= 38.0 m MAX. (V
: C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
iss
10 s, Duty cycle
= 800 pF TYP.
ch
Note1
= 25 °C, R
Note3
Note3
DS
A
GS
= 25 °C)
= 0)
GS
GS
GS
= 0)
= 10 V, I
= 4.5 V, I
= 4.0 V, I
G
N-CHANNEL POWER MOS FET
Power SOP8
= 25
PACKAGE
1 %
N
ote2
The mark
D
A
D
D
= 4.0 A)
V
= 25 °C, All terminals are connected.)
= 4.0 A)
= 4.0 A)
INDUSTRIAL USE
GS
I
D(pulse)
I
V
V
D(DC)
E
T
T
= 20 V
I
DATA SHEET
P
GSS
DSS
AS
stg
AS
ch
SWITCHING
T
shows major revised points.
2
–55 to + 150
x 2.2 mm
0 V
MOS FIELD EFFECT TRANSISTOR
±20
±32
150
2.0
8.0
6.4
30
±8
mJ
°C
°C
W
V
V
A
A
A
©
PA1720
1998, 1999

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UPA1720G-E1 Summary of contents

Page 1

... G The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G13888EJ2V0DS00 (2nd edition) ...

Page 2

... DSS Starting T TEST CIRCUIT 3 GATE CHARGE D.U. PG °C, All terminals are connected.) A SYMBOL TEST CONDITIONS 4.0 A DS(on 4 4.0 A DS(on 4 4.0 A DS(on ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 150˚C A 75˚C 1 25˚C 25˚C 0 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = 25˚ ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 4 100 - Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 Starting 100 Inductive Load - ...

Page 7

... M –0.05 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device. EQUIVALENT CIRCUIT ; Non Connect ...

Page 8

... Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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